In:
Chinese Physics Letters, IOP Publishing, Vol. 37, No. 5 ( 2020-05-01), p. 057301-
Abstract:
Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs. Here we show that wafer-sized Bi 2 Te 3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO 2 /Si substrates by magnetron cosputtering. The SiO 2 /Si substrates enable us to electrically tune ( Bi 1– x Sb x ) 2 Te 3 and Cr-doped ( Bi 1–x Sb x ) 2 Te 3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.
Type of Medium:
Online Resource
ISSN:
0256-307X
,
1741-3540
DOI:
10.1088/0256-307X/37/5/057301
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
2040565-0
SSG:
6,25
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