In:
IEEJ Transactions on Electronics, Information and Systems, Institute of Electrical Engineers of Japan (IEE Japan), Vol. 118, No. 9 ( 1998), p. 1299-1308
Type of Medium:
Online Resource
ISSN:
0385-4221
,
1348-8155
Uniform Title:
等温容量過渡分光法によるSi-MOS構造の深い準位の評価
DOI:
10.1541/ieejeiss1987.118.9_1299
Language:
English
,
Japanese
Publisher:
Institute of Electrical Engineers of Japan (IEE Japan)
Publication Date:
1998
detail.hit.zdb_id:
2218976-2
Permalink