In:
Chinese Physics Letters, IOP Publishing, Vol. 37, No. 2 ( 2020-02-01), p. 027302-
Abstract:
To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers, an inverse-trapezoidal electron blocking layer is designed. Lasers with three different structural electron blocking layers of rectangular, trapezoidal and inverse-trapezoidal structures are established. The energy band, electron concentration, electron current density, P – I and V – I characteristics, and the photoelectric conversion efficiency of different structural devices are investigated by simulation. The results show that the optical and electrical properties of the inverse-trapezoidal electron blocking layer laser are better than those of rectangular and trapezoidal structures, owing to the effectively suppressed electron leakage .
Type of Medium:
Online Resource
ISSN:
0256-307X
,
1741-3540
DOI:
10.1088/0256-307X/37/2/027302
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
2040565-0
SSG:
6,25
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