In:
Chinese Physics Letters, IOP Publishing, Vol. 39, No. 4 ( 2022-04-01), p. 048101-
Abstract:
Nonpolar ( 11 2 ¯ 0 ) plane In x Ga 1− x N epilayers comprising the entire In content ( x ) range were successfully grown on nanoscale GaN islands by metal-organic chemical vapor deposition. The structural and optical properties were studied intensively. It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33, even though the crystalline quality was gradually declined, which was accompanied by the appearance of phase separation in the In x Ga 1− x N layer. Photoluminescence wavelengths of 478 and 674 nm for blue and red light were achieved for x varied from 0.06 to 0.33. Furthermore, the corresponding average lifetime ( τ 1/ e ) of carriers for the nonpolar InGaN film was decreased from 406 ps to 267 ps, indicating that a high-speed modulation bandwidth can be expected for nonpolar InGaN-based light-emitting diodes. Moreover, the bowing coefficient ( b ) of the ( 11 2 ¯ 0 ) plane InGaN was determined to be 1.91 eV for the bandgap energy as a function of x .
Type of Medium:
Online Resource
ISSN:
0256-307X
,
1741-3540
DOI:
10.1088/0256-307X/39/4/048101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
2040565-0
SSG:
6,25
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