ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this work, we have numerically integrated in space and time the effective mass Schrödinger equation for an exciton in a semiconductor quantum-well structure. Considering a Coulomb interaction between the electron-hole pair and an external electric field, we have studied the excitonic tunneling escape process from semiconductor quantum wells. Our method of calculation has been applied to types-I, -II, and -III quantum-well superlattices. In addition, we present the calculated excitonic lifetimes for the GaAs/GaAlAs, InAs/GaSb, and HgTe/HgCdTe systems under an external electric field. In the HgTe/CdTe system, the possibility of having similar electron and hole lifetime values is also found if the applied electric field is large enough.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357208
