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Raman study of band bending at ZnSe/GaAs interfaces (1995)

Pagès, O. ; Renucci, M. A. ; Briot, O. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 1241-1248

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Apparent p-type conductivity in nonintentionally doped ZnSe layers, grown at high temperature on semi-insulating GaAs substrates, is investigated by Raman spectroscopy. The microprobe technique provides direct evidence for carrier location on the GaAs side of the structures, close to the interface. Line-shape analysis of the coupled LO phonon-plasmon mode for different exciting wavelengths can be achieved, within the model of Hon and Faust [Appl. Phys. 1, 241 (1973)], only when incorporating plasma inhomogeneity. Electronic band bending at the junction in GaAs is deduced from the inferred carrier-density profile. Changes in Raman spectra under strong illumination are shown to proceed from the flattening of the bands through selective carrier photoinjection. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358925

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