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Band alignment and carrier injection at the porous-silicon–crystalline-silicon interface (1995)

Ben-Chorin, M. ; Möller, F. ; Koch, F.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 4482-4488

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The current-voltage characteristics and the photoresponse of metal-porous Si–p-type Si heterostructures have been studied. It is shown that the common interpretation of the current-voltage characteristics, which assumes that the current is limited by the Schottky barrier at the metal-porous Si interface, is wrong. An alternative explanation based on the electric-field dependence of the porous Si conductivity is suggested. It is shown that the rectifying behavior originates from a depletion inside the c-Si substrate at its interface to the porous Si. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359443

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