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Conduction and 1/f noise analysis in amorphous silicon thin-film transistors (1996)

Valenza, M. ; Barros, C. ; Dumas, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 923-928

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Conduction and low-frequency noise are analyzed in the channel of hydrogenated amorphous silicon (a-Si:H) thin-film transistors. 1/f noise expressions are proposed starting from a simple conduction model describing drain current in the ohmic range. Carrier fluctuations (ΔN model) and mobility fluctuations (Δμ model) are investigated. For long-channel transistors the conduction is quite similar to crystalline metal–oxide–semiconductor field-effect transistors but involving low mobility values. The 1/f noise behavior is analyzed by mobility fluctuations as predicted by Hooge's theory. For small channel transistors a crowding effect appears and access series resistances affect the conduction. The excess noise is then mainly controlled by these resistances when large gate voltages VGS are applied. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360873

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