Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 1983-1989
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
1/f noise investigations in thin film transistors with long channel and thin thickness of amorphous silicon film are presented. It is found that the noise behavior follows the mobility fluctuation model in ohmic and saturation regimes, whereas in the subthreshold conduction, a quadratic law versus the drain current is observed. The noise modeling is proposed taking into account the equations usually utilized for crystalline silicon metal–oxide–semiconductor field-effect transistors according to Hooge's theory. Moreover, the Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model is adapted to predict the noise levels. Two noise parameters have been extracted: The first is used in the subthreshold region, whereas we show that the second, directly related to Hooge's parameter, is adequate to describe alone the noise in normal conduction up to the saturation. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372124
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