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Passivation of an anodic oxide/p-Si interface stimulated by electron injection (2001)

Dittrich, Th. ; Burke, Th. ; Koch, F.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 4636-4642

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The positive oxide charge (Qox) and the concentration of nonradiative recombination defects (Nit) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during electron injection. Qox and Nit decreased strongly due to electron injection. The observed effect is suggested to be inverse to the negative-bias-temperature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1356431

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