Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 2904-2906
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Interdiffusion and interface compound formation has been observed at the system Ni/In by using thin-film couples as well as thin In films on low index Ni single-crystal substrates. The method applied was the perturbed γγ-angular correlation technique, which is very sensitive to local structures and their changes around probe atoms. The successive occurrence of different Ni/In compounds could be observed on isochronal annealing above 230 K. A correlation between the appearance of compounds and In film thickness has been found.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104717
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