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Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy (2001)

Sánchez, A. M. ; Pacheco, F. J. ; Molina, S. I. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 2688-2690

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Transmission electron microscopy is used to investigate GaN layers grown on Si(111) substrates by plasma-assisted molecular-beam epitaxy. These layers were grown on top of different AlN buffer layers. Multiple-beam dark-field techniques applied to both cross-sectional and planar-view samples show the presence of inversion domains. These domains grow directly from the interface with the Si(111) substrate. Such observations are related, as in the case of growth on sapphire, to the symmetry difference between wurtzite and diamond. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1368373

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