In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 667 ( 2013-3), p. 265-271
Abstract:
Nanostructured ZnO as a seeded was prepared by sol-gel technique on p-type silicon in various low molarities. Zinc acetate, Diethanolamine (DEA), and isopropyl were use as starting material, stabilizer, and solvent respectively. Atomic Force Microscopy (AFM) analysis shows smooth surface and uniform layer were produced in low molarities of precursor. The surface morphology of nanostructured ZnO was analyzed by Field Emission Scanning Electron Microscopic (FESEM). It is found that the nanostructured ZnO were successfully deposited on the silicon substrate with size ~10 nm to ~35 nm. Photoluminescence spectroscopy was employed to study the band gap in room temperature. It shows that very low intensity of PL in 0.05m and 0.1 m. PL intensity become more obvious starting from 0.15 m of precursor concentration.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.667
DOI:
10.4028/www.scientific.net/AMR.667.265
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2013
detail.hit.zdb_id:
2265002-7