Publication Date:
2016-12-09
Description:
Author(s): T. Wendav, I. A. Fischer, M. Virgilio, G. Capellini, F. Oliveira, M. F. Cerqueira, A. Benedetti, S. Chiussi, P. Zaumseil, B. Schwartz, K. Busch, and J. Schulze Employing a low-temperature growth mode, we fabricated ultrathin S i 1 − x G e x /Si multiple quantum well structures with a well thickness of less than 1.5 nm and a Ge concentration above 60% directly on a Si substrate. We identified an unusual temperature-dependent blueshift of the photoluminescence (PL) … [Phys. Rev. B 94, 245304] Published Thu Dec 08, 2016
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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