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  • Articles  (1,410)
  • 2010-2014  (1,410)
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  • Articles  (1,410)
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  • 1
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    Transport coefficients and electron energy probability function in Ar–He 13.56 MHz hollow cathode discharge (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: March 2015 Source: Vacuum, Volume 113 Author(s): S. Alsheikh Salo , S. Haddad The electron swarm parameters of Ar/He mixtures in a low pressure 13.56 MHz hollow cathode discharge in remote plasma are analyzed utilizing Boltzmann equation method. These parameters are important to understand the mechanism of plasma dynamics and could not be measured directly. In this work, we calculate the electron energy distribution functions (EEDF), compare them with experimental results, and determine the mobility, the drift velocity, the average electron energy and the diffusion coefficients in pure argon and in Ar/He mixtures.
    Print ISSN: 0042-207X
    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 2
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    A model for quantification of GDOES depth profiles (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: March 2015 Source: Vacuum, Volume 113 Author(s): Y. Liu , W.H. Yu , J.Y. Wang The MRI (Mixing-Roughness-Information depth) model and the CRAS (Crater-Simulation) model are combined for the quantification of GDOES (glow discharge optical emission spectroscopy) depth profile by taking into account the effects of crater, roughness and preferential sputtering in depth profiling. This combined model is successfully applied for the quantification of the measured GDOES depth profiles of N in a nitride coating and of Ni in a Ni-coated copper substrate.
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    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 3
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    Synthesis of supported bimetal phosphide catalysts based on red phosphor and hydrodesulfurization property (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Limin Song , Shujuan Zhang , Xiaoqing Wu , Kai Wang Silica-supported NiCoP (NiCoP/SiO 2 ) catalysts were prepared by reducing nickel chloride (NiCl 2 ·6H 2 O) and cobalt chloride (CoCl 2 ·6H 2 O) with red phosphor (P) precursors. Physicochemical properties were determined by inductively coupled plasma spectroscopy, N 2 adsorption experiment, X-ray diffraction, transmission electron microscopy, Fourier transform infrared spectroscopy, and differential scanning calorimetry. Catalytic activities against the hydrodesulfurization of dibenzothiophene were evaluated in a fixed-bed reactor in flowing H 2 . The as-prepared NiCoP/SiO 2 catalyst exhibited high hydrodesulfurization activities and selectivity for indirect hydrodesulfurization (>90%).
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    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 4
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    Synthesis of single-walled carbon nanotubes by low-frequency bipolar pulsed arc discharge method (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: March 2015 Source: Vacuum, Volume 113 Author(s): Kazi Hanium Maria , Tetsu Mieno The effective synthesis of single-walled carbon nanotubes (SWNTs) by low-frequency bipolar pulsed arc discharge method using a newly developed bipolar pulsed current circuit with constant current and constant pulse duration is reported. In this method, there is no cathode deposit, which means that all the sublimated carbon becomes soot containing single-walled nanotubes. The soot production rate of the bipolar pulsed arc discharge method is compared with those of the DC, the AC, and the unipolar pulsed arc discharge methods. It is found that the soot production rate increases with increasing frequency whereas the quality of the produced SWNTs remains almost the same. The nanostructures of the synthesized SWNTs are characterized by a TEM and Raman spectroscopy.
    Print ISSN: 0042-207X
    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 5
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    Analysis on cracking in hard thin films on a soft substrate under Berkovich indentation (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Kunkun Fu , Li Chang , Bailin Zheng , Youhong Tang , Yongbai Yin The present work studied fracture behavior of a thin amorphous carbon film by nano-indentation using a sharp Berkovich indenter. The film was deposited onto a poly-ether-ether-ketone substrate using the plasma deposition method. After indentation tests, both radial cracks and picture-frame cracks were observed. A three-dimensional finite element (FE) model was developed to understand the stress evolution in the thin film under Berkovich indentation. The stress analysis showed that the maximum tensile stress in the film occurs along the indenter edge which contributes to the formation of radial cracks. It was also found that the picture-frame cracks can be developed, depending on the modulus ratio between the film and the substrate. The FE simulation results agree well with experimental observations and shed new insights into fracture mechanics of thin films under Berkovich indentation.
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    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 6
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    Thermal and chemical stability of hexagonal boron nitride (h-BN) nanoplatelets (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Nikolaos Kostoglou , Kyriaki Polychronopoulou , Claus Rebholz High-temperature properties of boron nitride platelets (200–800 nm in width and 30–50 nm in thickness) were systematically evaluated through thermogravimetric analysis (TGA) in combination with differential scanning calorimetry (DSC). X-Ray Diffraction (XRD) studies confirmed the hexagonal graphitic-like structure of the material, while Fourier-Transform Infrared Spectroscopy (FT-IR) indicated the active vibration modes related to the B–N bond. The specific surface area (SSA), calculated by the multi-point Brunauer-Emmet-Teller (BET) method, was determined at ∼23 m 2 /g through N 2 adsorption/desorption measurements at 77 K. Both high-temperature resistance and oxidation behavior were examined from room temperature (25 °C) up to ∼1300 °C under air-flow conditions. The h-BN platelets demonstrated a high thermal stability of up to ∼1000 °C, while their oxidation occurred in the temperature range between 1000 and 1200 °C, followed by the formation of boron oxide (B 2 O 3 ).
    Print ISSN: 0042-207X
    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 7
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    Oxidation kinetics of the AlPO4 ceramic coatings by pulse arc discharge deposition on SiC–C/C composites (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Jianfeng Huang , Wei Hao , Hejun Li , Qiangang Fu , Liyun Cao , yongliang Zhang , Cuiyan Li , Lixiong Yin , Haibo Ouyang An AlPO 4 oxidation-protective coating was successfully prepared on SiC pre-coated carbon/carbon composites (SiC–C/C) by pulse arc discharge deposition. The structure and oxidation resistance of the as-prepared AlPO 4 /SiC multilayer coatings were investigated. The results were confirmed by oxidation experiments performed at 1573 K, 1673 K and 1773 K, which demonstrated that the AlPO 4 /SiC coating could efficiently protect C/C composites from oxidation at 1773 K for 160 h with a weight loss of only 0.7%. The oxidation activation energy of the coated C/C composites at 1573–1773 K was calculated to be 119.2 kJ mol −1 .
    Print ISSN: 0042-207X
    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 8
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    Characterization and residual stress analysis of TiN/TiCN films on AZ31 magnesium alloy by PVD (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Haitao Li , Qiang Wang , Minghui Zhuang , Junjie Wu TiN/TiCN films were prepared on AZ31 by physical vapor deposition. Structural features and residual stress were determined by X-ray fluorescence (XRF), scanning electron microscopy (SEM) and based on the grazing incidence X-ray diffraction (GIXRD), respectively. Results show that films have (111) preferred orientation. With a increasing of the reaction gas ratio, the C + N and Ti content increases first then decreases, and reach at the maximum value when the gas ratio is 15/5/3. Film have uniform thickness, and the hole shape defects appears in partial film and non-uniformly distribute on the surface of the film. The residual stress was tensile stress, and the residual tensile stress value decreased with the increase of the reaction gas ratio.
    Print ISSN: 0042-207X
    Electronic ISSN: 1879-2715
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 9
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    Metal-semiconductor transition in CuS-Cu1.8S mixed phase thin films (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Bing Ren , Lin Wang , Jian Huang , Ke Tang , Yimin Yang , Linjun Wang We report the semiconducting behavior at room temperature and a metal-semiconductor transition (MST) at lower temperature in copper sulfides (Cu x S) thin films. Cu x S thin films, deposited by direct magnetron sputtering technique, are found to be of CuS-Cu 1.8 S mixed phase by XRD. The deposited films exhibit low electrical resistivity close to ∼10 −4  Ω cm at room temperature and free-carrier absorption in the near infrared (NIR) region due to excess holes in the valence band. Temperature dependent resistivity measurements show the MST at ∼260 K, to the best of our knowledge, for the first time. The temperature dependent metal-semiconductor transition is attributed to the phase transition from Cu 1.8 S to CuS at T c during the cooling process. This work could help give insight into the transport characteristics as well as phase transition at lower temperature in copper sulfides thin films.
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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  • 10
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    Growth temperature induced physical property variation of InN films grown on nitrided sapphire substrate by PAMBE (2014)
    Elsevier
    In: Vacuum
    Details
    Publication Date: 2014-12-13
    Description: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Yang Zhao , Hui Wang , Hang Yang , Guoguang Wu , Qiang Jing , Fubin Gao , Wancheng Li , Baolin Zhang , Guotong Du InN epilayers were deposited on nitrided sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE) system. The physical properties of InN films under different growth temperatures were thoroughly studied. The XRD results indicated that as-prepared InN films without Indium droplets were preferentially oriented in the c-axis direction. The SEM results showed that the InN films grown in a two-dimensional mode with a thickness of ∼200 nm under the growth temperature of 460 °C. In addition, the optical absorption measurement exhibited that the energy bandgap of InN films was around 0.75–0.81eV and the PL spectra of the epilayers revealed an infrared emission. Moreover, the electrical properties of the films were discussed by Hall effect in detail.
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
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