Keywords:
Manufacturing processes -- Congresses.
;
Electronic books.
Type of Medium:
Online Resource
Pages:
1 online resource (744 pages)
Edition:
1st ed.
ISBN:
9780444596369
Series Statement:
Issn Series ; v.Volume 2
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=1181904
Language:
English
Note:
Front Cover -- Photon, Beam and Plasma Assisted Processing -- Copyright Page -- Table of Contents -- PREFACE -- CONFERENCE ORGANISATION -- SUPPORTING ORGANISATIONS AND SPONSORS -- PLENARY LECTURES -- Future Very-large-scale Integration Technology -- The δ Doping Layer: Electronic Properties and Device Perspectives -- High Temperature Superconducting Ceramics -- Part 1: THEORETICAL ASPECTS -- Chapter 1. A THERMAL DESCRIPTION OF THE MELTING OF c- AND a-SILICON UNDER PULSED EXCIMER LASERS -- 1. Introduction -- 2. The parameters -- 3. Results -- 4. Conclusion -- References -- Chapter 2. NUMERICAL SIMULATION OF TEMPERATURE DISTRIBUTIONS IN LAYERED STRUCTURES DURING LASER PROCESSING -- 1. Introduction -- 2. Simulation procedure -- 3. Silicon-on-sapphire -- 4. SiO2-covered silicon -- 5. Conclusions -- Acknowledgements -- References -- Part 2: DEPOSITION -- Chapter 3. LOW TEMPERATURE PLASMA ENHANCED CVD OF HIGHLY CONDUCTIVE SINGLE CRYSTALLINE AND POLYCRYSTALLINE SILICON MATERIALS -- 1. Introduction -- 2. Plasma enhanced CVD of single crystalline silicon layers at low temperatures -- 3. Plasma enhanced CVD of polycrystalline silicon layers at low temperature, preserving epitaxial information from the substrate -- 4. Conclusion -- Acknowledgements -- References -- Chapter 4. DELTA-TYPE DOPING PROFILES IN SILICON -- 1. Introduction -- 2. Growth procedure for delta layers -- 3. Characterization of delta layers -- 4. Device applications -- 5. Conclusion -- Acknowledgement -- References -- Chapter 5. SYNTHESIS OF SILICON CARBIDE POWDERS BY A CW CO2 LASER -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusions -- Acknowledgments -- References -- Chapter 6. LOW TEMPERATURE PHOTON-CONTROLLED GROWTH OF THIN FILMS AND MULTILAYERED STRUCTURES -- 1. Introduction -- 2. Experimental -- 3. Results -- 4. Discussion -- 5. Summary.
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Acknowledgments -- References -- Chapter 7. ArF LASER PHOTOCHEMICAL DEPOSITION OF AMORPHOUS SILICON FROM DISILANE: SPECTROSCOPIC STUDIES AND COMPARISON WITH THERMAL CVD * -- 1. Introduction -- 2. Experimental -- 3. Results -- References -- Chapter 8. PRECISION SURFACE TEMPERATURE MEASUREMENT AND FILM CHARACTERIZATION FOR LICVD OF a-Si:H FROM SiH4 -- 1. Introduction -- 2. Experimental -- 3. Results -- 4. Discussion -- References -- Chpater 9. PYROLYSIS AND IR LASER PHOTOLYSIS OF SiH4 MOLECULES IN THE PRESENCE OF NON REACTIVE AND REACTIVE ADDITIVES -- 1. Introduction -- 2. Experimental -- 3. Results -- 4. Discussion and conclusions -- References -- Chapter 10. PHOTOASSISTED MBE OF CdTe THIN FILMS -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- 4. Summary -- Acknowledgements -- References -- Chapter 11. PRECURSORS FOR THIN FILM OXIDES BY PHOTO-MOCVD -- 1. Introduction -- 2. Selection of precursors -- 3. Ultra-violet absorption of organometallic compounds -- 4. ß-Diketonates -- 5. Precursors of oxides -- 6. Aluminium oxide -- 7. Titanium dioxide -- 8. Lead oxide -- 9. Scandium oxide -- 10. Conclusion -- Acknowledgements -- References -- Chapter 12. CW AND PULSED UV LASER-INDUCED DEPOSITION FROM Cr(CO)6, Mo(CO)6, AND W(CO)6 -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- References -- Chapter 13. LOW TEMPERATURE OXIDATION OF CRYSTALLINE SILICON USING EXCIMER LASER IRRADIATION -- 1. Introduction -- 2. Large area oxidation -- 3. Patterned oxidation -- 4. Summary and conclusions -- Acknowledgements -- References -- Chapter 14. DEPOSITION OF HIGH QUALITY SiO2 LAYERS FROM TEOS BY EXCIMER LASER -- 1. Introduction -- 2. Experiments -- 3. Physical properties of the SiO2 layers -- 4. Electrical properties -- 5. Conclusions -- References -- Chapter 15. EVAPORATION OF SOLIDS BY PULSED LASER IRRADIATION.
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1. Introduction -- 2. Experimental -- 3. Results and discussion -- References -- Chapter 16. PULSED LASER ABLATIVE DEPOSITION OF THIN METAL FILMS -- 1. Introduction -- 2. Experimental details -- 3. Results and discussion -- References -- Chapter 17. GROWTH MODEL FOR MICROCRYSTALLINE SILICON -- 1. Introduction -- 2. Experimental setup and results -- 3. A growth model for hydrogenated microcrystalline silicon -- 4. Conclusions -- Acknowledgement -- References -- Chapter 18. THIN LAYERS OBTAINED BY PLASMA JET DEPOSITION AT LOW PRESSURE -- 1. Introduction -- 2. Results -- 3. Diffusion and decomposition of the compounds or elements in the plasma jet -- 4. Conclusions -- References -- Chapter 19. LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF CHROMIUM FILMS FROM CHROMIUMHEXACARBONYL USING A KrF EXCIMER LASER -- 1. Introduction -- 2. Experiments -- 3. Model considerations -- 4. Results and discussion -- 5. Conclusions -- Acknowledgements -- References -- Chapter 20. OXIDE GROWTH ON SILICIDES IN OXYGEN PLASMA -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusions -- Acknowledgments -- References -- Chapter 21. PLASMA NITRIDED OXIDE FILMS AS A THIN GATE DIELECTRIC -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusion -- Acknowledgement -- References -- Chapter 22. MODELLING OF SILICON NITRIDE DEPOSITION BY 254 nm Hg-PHOTOSENSITIZATION AND 185 nm PHOTOLYSIS OF SiH4/NH3 GAS MIXTURE -- 1. Introduction -- 2. Experimental -- 3. Modelling -- 4. Conclusions -- References -- Chapter 23. INVESTIGATION OF THE MECHANISM OF C02 LASER DRIVEN PRODUCTION OF ULTRAFINE SINTERABLE (Si3N4 AND SiC) POWDERS -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- References -- Chapter 24. EXCIMER LASER PHOTOLYSIS OF ORGANOMETALLIC COMPOUNDS FOR Zn DEPOSITION -- 1. Introduction.
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2. UV photolysis of DMZn and DEZN -- 3. Excimer (KrF) induced deposition of Zn from DEZn -- References -- Chapter 25. CHARACTERIZATION OF ION-BEAM-SPUTTERED TUNGSTEN FILMS ON SILICON -- 1. Introduction -- 2. Experimental details -- 3. Results -- 4. Discussion -- Acknowledgement -- References -- Chapter 26. AN IN SITU INFRARED STUDY OF THE ROOM TEMPERATURE OXIDATION OF SILICON WITH ATOMIC AND MOLECULAR OXYGEN -- 1. Introduction -- 2. Instrumental -- 3. Procedure -- 4. Results and discussion -- 5. Conclusions -- References -- Chapter 27. LOW TEMPERATURE CRYSTALLISATION OF AMORPHOUS-SILICON FILMS FOR THE FABRICATION OF THIN-FILM TRANSISTORS -- 1. Introduction -- 2. Deposition and thermal annealing of silicon layers -- 3. Transmission electron microscopy study -- 4. As-deposited film -- 5. Low-temperature annealed films -- 6. Effect of deposition parameters on grain size -- 7. PECVD oxides -- 8. Electrical characterisation -- 9. Thin-film transistors -- 10. Conclusions -- References -- Part 3: ETCHING -- Chapter 28. UV LASER ETCHING PROCESSES FOR FILM LAYERS USED IN SILICON INTEGRATED CIRCUITS -- 1. Introduction -- 2. Background -- 3. Results and discussion -- Acknowledgment -- References -- Chapter 29. MICROWAVE MULTIPOLAR PLASMA FOR ETCHING AND DEPOSITION -- 1. Introduction -- 2. Microwave multipolar plasma -- 3. Microwave excitation -- 4. Silicon etching by fluorine -- 5. Silicon homoepitaxy -- References -- Chapter 30. MERCURY CADMIUM TELLURIDE CHEMICALLY PHOTO-ASSISTED ETCHING -- 1. Introduction -- 2. Experimental set-up -- 3. Non-reactive etching -- 4. Chemically assisted etching -- 5. Conclusion -- Acknowledgments -- References -- Chapter 31. ON THE APPLICATION OF XPS, SSIMS AND QCM TO STUDY THE SURFACE OF A CF4 /O2 PLASMA TREATED POLYCARBONATE -- 1. Introduction -- 2. Experimental -- 3. Results -- 4. Discussion -- Acknowledgments -- References.
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Chapter 32. SEMICONDUCTOR SURFACE ETCHING BY HALOGENS: FUNDAMENTAL STEPS -- 1. Introduction -- 2. Experimental -- 3. Thermal desorption analysis -- 4. Isothermal gas phase analysis -- 5. Auger surface analysis for 300 K adsorption -- 6. Discussion -- References -- Chapter 33. LASER-INDUCED PHOTOETCHING OF SEMICONDUCTORS AND METALS -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusion -- Acknowledgment -- References -- Chapter 34. SILICON DAMAGE AND RESIDUE OVERLAYER CAUSED BY RIE AND RIBE PROCESSES WITH CHF3 -- 1. Introduction -- 2. Experimental procedure -- 3. Results and discussion -- 4. Conclusion -- Acknowledgment -- References -- Chapter 35. CW-LASER INDUCED CHEMICAL ETCHING OF THIN SILVER AND MOLYBDENUM FILMS -- 1. Introduction -- 2. Experimental -- 3. Experimental results -- 4. Discussion -- 5. Conclusion -- References -- Chapter 36. LASER PHOTOABLATION OF SPIN-ON-GLASS AND POLY(ETHYL CYANOACRYLATE) PHOTORESIST -- 1. Introduction -- 2. Materials -- 3. Experiment -- 4. Conclusion -- References -- Chapter 37. CARBONACEOUS OVERLAYER AND NEAR-SURFACE DAMAGE AFTER PURE CF4 REACTIVE ION BEAM ETCHING OF SILICON: EXPOSURE DOSE EFFECTS -- 1. Introduction -- 2. Experimental procedure -- 3. Experimental results -- 4. Discussion and conclusion -- Acknowledgments -- References -- Chapter 38. FINE STRUCTURING OF MAGNETIC AND HIGH-TC SUPERCONDUCTING CERAMIC OXIDES IN AN HC1 PLASMA -- 1. Introduction -- 2. Experimental method -- 3. Results -- 4. Discussion -- 5. Computer simulations -- 6. Conclusion -- Acknowledgments -- References -- Part 4: DOPING -- Chapter 39. LASER ASSISTED DIFFUSION IN GaAs FROM THIN EVAPORATED LAYERS -- 1. Introduction -- 2. Theoretical melted depth -- 3. Sample preparation -- 4. Experimental results -- 5. Conclusions -- Acknowledgements -- References.
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Chapter 40. OPTIMIZATION OF THE PARAMETERS INVOLVED IN THE PHOTOCHEMICAL DOPING OF Si WITH A PULSED ArF EXCIMER LASER.
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