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Deposition of 63Ni onto a Semiconductor Structure of Power Cells

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Abstract

A procedure was developed for electrochemical deposition of 63Ni onto the surface of a siliconbased semiconductor converter. A special electrochemical cell allowing the electrolysis to be performed in an inert atmosphere was developed. The principal possibility of preparing Ni metal films of preset thickness on the surface of a semiconductor converter was demonstrated.

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Authors and Affiliations

  1. Radiochemistry Chair, Chemical Faculty, Moscow State University, Moscow, Russia

    I. D. Kharitonov & S. N. Kalmykov

  2. Institute of Materials for Modern Power Engineering and Nanotechnology, Mendeleev University of Chemical Technology of Russia, ul. Geroev Panfilovtsev 20, Moscow, 125480, Russia

    A. O. Merkushkin, G. V. Veretennikova & E. P. Magomedbekov

Authors
  1. I. D. Kharitonov
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  2. A. O. Merkushkin
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  3. G. V. Veretennikova
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  4. E. P. Magomedbekov
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  5. S. N. Kalmykov
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Corresponding author

Correspondence to G. V. Veretennikova.

Additional information

Original Russian Text © I.D. Kharitonov, A.O. Merkushkin, G.V. Veretennikova, E.P. Magomedbekov, S.N. Kalmykov, 2018, published in Radiokhimiya, 2018, Vol. 60, No. 1, pp. 24–26.

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Kharitonov, I.D., Merkushkin, A.O., Veretennikova, G.V. et al. Deposition of 63Ni onto a Semiconductor Structure of Power Cells. Radiochemistry 60, 23–25 (2018). https://doi.org/10.1134/S1066362218010046

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  • DOI: https://doi.org/10.1134/S1066362218010046

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