METAL OXIDE THIN FILMS AS PH SENSING MEMBRANE FOR EXTENDED GATE FIELD EFFECT TRANSISTOR

Authors

  • Muhammad AlHadi Zulkefle NANO-ElecTronic Centre, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • Rohanieza Abdul Rahman NANO-ElecTronic Centre, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • Khairul Aimi Yusof NANO-ElecTronic Centre, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • Wan Fazlida Hanim Abdullah Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor
  • Mohamad Rusop Mahmood NANO-Science Technology (NST), Institute of Science (IOS), Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia
  • Sukreen Hana Herman Core of Frontier Materials and Industry Applications, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia

DOI:

https://doi.org/10.11113/jt.v78.8770

Keywords:

Metal oxide, titanium dioxide, (EGFET) pH sensor, sensing membrane, sensitivity, sol-gel spin coating, zinc oxide

Abstract

In this research, metal oxides (ZnO and TiO2) thin films were fabricated by the sol-gel spin coating method. The thin films were applied as the pH sensing membrane for the extended-gate field effect transistor (EGFET) sensor to distinguish the sensing capability between them. The surface morphology, thin film components and crystalline quality were characterized and the sensor performance of both materials were characterized and compared. The results showed that TiO2 thin film gave higher sensitivity with better linearity compared to the ZnO thin films hence was considered a more suitable material to be used as sensing membrane in EGFET pH sensor compared to zinc oxide. 

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Published

2016-05-25

Issue

Vol. 78 No. 5-8: Advancement on Information Technology

Section

Science and Engineering

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How to Cite

METAL OXIDE THIN FILMS AS PH SENSING MEMBRANE FOR EXTENDED GATE FIELD EFFECT TRANSISTOR. (2016). Jurnal Teknologi, 78(5-8). https://doi.org/10.11113/jt.v78.8770