Electrical and Structural Properties of TiO2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

M. Basri; Mohd Nor Asiah; Mohd Khairul bin Ahmad; Mohamad Hafiz Mamat; Mohamad  Rusop Mahmood

doi:10.4028/www.scientific.net/AMR.667.371

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 667Electrical and Structural Properties of TiO2 Thin...

Electrical and Structural Properties of TiO₂Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

Abstract:

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.

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Periodical:

Advanced Materials Research (Volume 667)

Pages:

371-374

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.667.371

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Online since:

March 2013

Authors:

M. Basri, Mohd Nor Asiah, Mohd Khairul bin Ahmad, Mohamad Hafiz Mamat, Mohamad Rusop Mahmood

Keywords:

Electrical Properties, Sol-Gel Method, Spin-Coating Technique, Structural Property, TiO₂ Thin Film

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