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Performance of Ultraviolet Photoconductive Sensor Based on Aluminium-Doped Zinc Oxide Nanorod-Nanoflake Network Thin Film Using Aluminium Contacts

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Abstract:

In this research, we fabricated UV photoconductive sensor using aluminium (Al)-doped ZnO nanorod-nanoflake network thin film. These nanostructures were deposited on the seed-layer-coated glass substrate using sonicated sol-gel immersion method. By using Al contacts, it was found that the performance of the UV photoconductive sensor is very good. The responsivity of the device was 46.4 mA/W with sensitivity of 17.5 under 365-nm UV light (5 mW/cm2) at bias voltage of 10 V. Our study revealed that these nanostructures are very promising material for the UV photoconductive sensor applications.

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Periodical:

Advanced Materials Research (Volume 832)

Pages:

298-302

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.832.298

Citation:

Cite this paper

Online since:

November 2013

Authors:

M.H. Mamat, Nor Diyana Md Sin, I. Saurdi, N.N. Hafizah, Mohd Firdaus Malek, Mohd Nor Asiah, Zuraida Khusaimi, Zulkefle Habibah, Nafarizal Nayan, Mohamad Rusop

Keywords:

Al-Doped ZnO, Electrical Properties, Nanorod Arrays, Sonicated Sol-Gel Immersion Method, Stress Characteristic

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