Characteristics of Humidity Sensor Fabricated Using Nanostructured ZnO Thin Film by Sol-Gel Method

M.S. Mansor; Mohamad Hafiz Mamat; Z. Mohamad; Mohamad Rusop

doi:10.4028/www.scientific.net/AMR.667.380

Paper Titles

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High Transparency Characteristics of Zinc Oxide Thin Films Annealed at Different Temperatures
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Electrical and Structural Properties of TiO₂Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method
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Zinc Oxide Nanorods Characteristics Prepared by Sol-Gel Immersion Method Immersed at Different Times
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Characteristics of Humidity Sensor Fabricated Using Nanostructured ZnO Thin Film by Sol-Gel Method
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Electrical Characteristic of UV Sensor Using Nanostructured Al Doped ZnO Thin Film
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Optical Properties of Al Doped Zinc Oxide Nanorods Thin Film Deposited by Immersion Technique
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Diode Characteristics of Zinc Oxide Thin Film at Different Deposition Time for FET Applications
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Effect of Etching Time on Electrical and Optical Properties of Porous Silicon
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 667Characteristics of Humidity Sensor Fabricated...

Characteristics of Humidity Sensor Fabricated Using Nanostructured ZnO Thin Film by Sol-Gel Method

Abstract:

We have investigated the morphology and sensitivity characteristics of nanostructured ZnO thin film prepared by sol-gel method from different molarities of zinc nitrate hexahydrate and hexamethylenetetramine (HMT) solutions. ZnO thin film coated glass substrates were used to growth the ZnO structures and have been annealed at different temperatures. The morphology of the samples was observed by scanning electron microscopy (SEM) and their sensitivity characteristics were measured by using the I-V measurement. The SEM studies shows that the nanostructured ZnO was denser at higher molarities and I-V measurement demonstrates that the nanostructured ZnO having higher sensitivity at higher molarities and higher annealing temperatures.