Abstract
Lateral field emission diodes were successfully fabricated using atomic force microscopy (AFM)-based electrochemical nanolithography and tetramethyl ammonium hydroxide (TMAH) wet etching method. Field emission (FE) current of the silicon emitter cathode was measured as a function of the applied anode voltage under vacuum environment. For narrowed nanogaps from 55 to 35 nm, the turn-on voltage was decreased from 21 to 16 V. The turn-on voltage of the 35 nm gap was reduced from 16 to 8 V by changing the curvature radius of the cathode tip. The sharper emitter had the lowest turn-on voltage, largest field-enhancement factor, and good stability, which were attributed to the small emitter radius at the cathode tip and very slight changes in the local field factor. These results indicate that the diodes fabricated using this technique had the lowest value of turn-on voltage ever reported for lateral silicon FE devices.
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References
Milne W, Teo K, Mann M, Bu I, Amaratunga G, De Jonge N, Allioux M, Oostveen J, Legagneux P, Minoux E (2006) Carbon nanotubes as electron sources. Phys Status Solidi A 203:1058–1063
Zhou J, Xu NS, Deng SZ, Chen J, She JC, Wang ZL (2003) Large‐area nanowire arrays of molybdenum and molybdenum oxides: synthesis and field emission properties. Adv Mater 15:1835–1840
Temple D, Palmer W, Yadon L, Mancusi J, Vellenga D, McGuire G (1998) Silicon field emitter cathodes: fabrication, performance, and applications. J Vac Sci Technol A 16:1980
Kang W, Davidson J, Wong Y, Holmes K (2004) Diamond vacuum field emission devices. Diamond Relat Mater 13:975–981
Milne W, Teo K, Amaratunga G, Legagneux P, Gangloff L, Schnell JP, Semet V, Binh VT, Groening O (2004) Carbon nanotubes as field emission sources. J Mater Chem 14:933–943
Ha B, Seo SH, Cho JH, Yoon CS, Yoo J, Yi GC, Park CY, Lee CJ (2005) Optical and field emission properties of thin single-crystalline GaN nanowires. J Mater Chem B 109:11095–11099
Chen Y, Pepin A (2001) Nanofabrication: conventional and nonconventional methods. Electrophoresis 22:187–207
McCreery RL (2004) Molecular electronic junctions. Chem Mater 16:4477–4496
Tsutsui M, Taniguchi M, Kawai T (2008) Fabrication of 0.5 nm electrode gaps using self-breaking technique. Appl Phys Lett 93:163115
Chen F, Qing Q, Ren L, Wu Z, Liu Z (2005) Electrochemical approach for fabricating nanogap electrodes with well controllable separation. Appl Phys Lett 86:123105, 123105–123103
Kanda A, Wada M, Hamamoto Y, Ootuka Y (2005) Simple and controlled fabrication of nanoscale gaps using double-angle evaporation. Phys E Low Dimen Syst Nanostruct 29:707–711
Hoffmann R, Weissenberger D, Hawecker J, Stoffler D (2008) Conductance of gold nanojunctions thinned by electromigration. Appl Phys Lett 93:043118, 043118–043113
Rouhi J, Mahmud S, Hutagalung SD, Kakooei S (2011) Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography. J Micro/Nanolith MEMS MOEMS 10:043002
Rouhi J, Mahmud S, Hutagalung SD, Kakooei S (2012) Optimization of nano-oxide mask fabricated by atomic force microscopy nanolithography: a response surface methodology application. Micro Nano Lett 7:325–328
Pal P, Sato K, Shikida M, Gosálvez MA (2009) Study of corner compensating structures and fabrication of various shapes of MEMS structures in pure and surfactant added TMAH. Sensors Actuators A Phys 154:192–203
Fowler RH, Nordheim L (1928) Electron emission in intense electric fields. Proc R Soc Lond Ser A Cont Pap Math Phys Charact 119:173–181
Rouhi J, Mahmud S, Hutagalung S, Naderi N (2012) Field emission in lateral silicon diode fabricated by atomic force microscopy lithography. Electron Lett 48:712–714
Park JH, Lee HI, Tae HS, Huh JS, Lee JH (1997) Lateral field emission diodes using SIMOX wafer. IEEE Trans Electron Devices 44:1018–1021
Shin H, Yang S, Hwang T, Han S, Lee J, Lee YD (1999) Lateral silicon field emission devices using electron beam lithography. Jpn J Appl Phys 39:134–135
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The authors gratefully acknowledge that this work was partially supported by the NANO-SciTech Centre at the Institute of Science (IOS) in the Universiti Teknologi MARA.
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Rouhi, J., Mahmood, M.R., Mahmud, S. et al. The effect of emitter geometry on lateral field emission diodes fabricated by AFM-based electrochemical nanolithography. J Solid State Electrochem 18, 1695–1700 (2014). https://doi.org/10.1007/s10008-014-2403-5
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DOI: https://doi.org/10.1007/s10008-014-2403-5