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  • 1
    Keywords: Sonne ; Forschungsfahrt
    Type of Medium: Book
    Pages: 86 Bl. + Anl , graph. Darst., Kt
    Language: Undetermined
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  • 2
    Publication Date: 2024-02-03
    Description: The MARIANA I- expedition had three main aims: 1) Performance of an ODP-site pre-survey of a serpentinite diapir in the Mariana fore-arc region; 2) Investigation of volcanism and hydrothermalism in the Mariana back-arc basin; 3. Investigation of the distribution of manganese nodules and crusts in the Philippine basin. During the transect across the Philippine basin, 7 different regions comprising a total of 37 stations were sampled. Investigations were carried out in areas over the Kyushu-Palau and Central ridges, as well as in one shallow-water and 4 deep (~ 5000 m) water regions scattered across the basin. The shallow-water station yielded manganese-nodule-covered, semilithified foraminiferal sand. Larger nodules (up to 10 cm in diameter) were found on the Kyushu- Palau ridge. They were associated with foraminiferal sand and carbonate ooze. In addition, hydrogenetic manganese crusts were also dredged at both the Kyushu-Palau and Central ridges.
    Keywords: BCR; Box corer (Reineck); Comment; Deposit type; DEPTH, sediment/rock; Description; Dredge; DRG; Event label; FFGR; File name; Free-fall grab; GIK/IfG; GIK17165-1; GIK17167-1; GIK17168-1; GIK17169-1; GIK17170-1; GIK17174-1; GIK17175-1; GIK17177-1; GIK17178-1; GIK17179-1; GIK17180-1; GIK17181-1; GIK17182-1; GIK17184-1; GIK17187-1; GIK17193-1; GIK17194-1; GIK17195-1; GIK17196-1; GIK17197-1; GIK17200-1; GIK17201-1; Identification; Institute for Geosciences, Christian Albrechts University, Kiel; KAL; Kasten corer; Mariana arc/Philippine Basin; MARIANA I; NOAA and MMS Marine Minerals Geochemical Database; NOAA-MMS; Position; Quantity of deposit; Sediment type; Shape; Size; SO57; SO57_5DS; SO57_66KG; SO57_67FG; SO57_77KG; SO57_84FG; SO57_93KG; SO57_96KG; Sonne; Substrate type; Surface description; Uniform resource locator/link to image; Visual description
    Type: Dataset
    Format: text/tab-separated-values, 269 data points
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  • 3
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    People’s Republic of China. Ministry of Agriculture. Bureau of Fisheries
    In:  http://aquaticcommons.org/id/eprint/16635 | 424 | 2015-05-08 12:30:42 | 16635 | COP/BMP Aquaculture
    Publication Date: 2021-07-07
    Description: Weimin, ZOU, lexian YANG, lan JIANG, Shuqin WU, Qi YI, Jianli WU
    Keywords: Fisheries ; Multiple species ; Criteria ; Asia
    Repository Name: AquaDocs
    Type: monograph
    Format: application/pdf
    Format: application/pdf
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  • 4
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    Unknown
    In:  http://aquaticcommons.org/id/eprint/16653 | 424 | 2015-05-08 13:57:30 | 16653
    Publication Date: 2021-07-07
    Keywords: Aquaculture ; Multiple species ; Guidelines ; Asia
    Repository Name: AquaDocs
    Type: monograph
    Format: application/pdf
    Format: application/pdf
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 2632-2636 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1378-1385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we report a high-performance ultrathin oxide (≈80 A(ring)) prepared by a low-temperature wafer loading and N2 preannealing before oxidation. This recipe can reduce native oxide thickness and thermal stress compared to the conventional oxidation recipe. The high-resolution transmission electron microscopy reveals that the SiO2/Si interface is atomically flat, and a thin crystalline-like oxide layer about 7 A(ring) exists at the interface. Oxides prepared by the proposed recipe show a very high dielectric breakdown field (≥16 MV/cm) and a very low interface state density (Nit ≈ 3 × 109 eV−1 cm−2 at midgap). The effective barrier height at cathode derived from the slopes of log(Jg/E2ox) vs 1/Eox and tbd vs 1/Eox plots is about 3.9 eV, instead of 3.2 eV for the control sample. It also shows a better immunity to the charge trapping and interface state generation under high-field stressing, and superior time-dependent dielectric breakdown characteristics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3384-3386 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 265-270 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and analyzed heterojunctions of CuInSe2 (CIDS) and amorphous hydrogenated silicon (ASIL), both p:n and n:p. Reasonable rectifying properties (400:1 at 0.5 V) have been obtained, and capacitance-voltage behavior indicates a sharp interface. Optical internal photoemission measurements under various bias conditions show that the band offsets for p:n structures are 0.38 and 0.43 eV for valence and conduction bands, respectively. Excitation can occur at the interface from the CIDS valence band to the ASIL conduction band. The individual band bendings are also obtained from the measurements.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 646-648 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability for Pd/n-GaSb Schottky contacts is analyzed and studied. At room temperature, Pd/n-GaSb Schottky diodes have better performance, but when the annealing temperature is increased to 300 and 450 °C for 30 min, Schottky contacts gradually become ohmic contacts. From the measurement of Rutherford backscattering spectroscopy and x-ray diffraction analysis, the result indicates that the interdiffusion between palladium and gallium forming Ga5Pd is the dominant factor for degrading properties of Schottky diodes.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4503-4507 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing behaviors of dislocation loops formed near the projected range (Rp loops) in 150 keV, 5×1015/cm2 As+- implanted (001)Si have been studied by both planview and cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry. Factors influencing the formation and growth of the Rp loops, such as annealing temperature and time, as well as single- and two-step annealings have been investigated. The Rp loops were observed in samples annealed at 550–900 °C for 0.5 h. The loops were also found in samples annealed at 800 °C for a time as short as 1 s and as long as 8 h. However, they were not seen in samples annealed at 470 °C for 4 h, 500 °C for 2 h, or 550 °C for 15 min. The annealing behaviors of Rp loops in single- and two-step annealed samples and in samples with an oxide capping layer were found to be consistent with the suggestion that their formation is related to the agglomeration of self-interstitials mediated by the presence of a high concentration of electrically inactive arsenic atoms.
    Type of Medium: Electronic Resource
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