ISSN:
1618-2650
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract Applying a recently developed three dimensional SIMS imaging technique major differences in the distribution of trace elements in ultra high purity Mo and W have been found. In the electron beam melted material severe grain boundary segregation of trace elements have occurred whereas in the hot pressed material trace elements have been present as precipitates with a size of 5–15 μm. Guided by the results of the 3D-SIMS images and the advantages of the sintering process a material with homogeneous distribution of trace elements has been developed and characterised. To test the applicability for the microelectronics industry, sputtering targets have been manufactured out of this “new” material and layers with a thickness of 350 nm have been sputterdeposited on silicon. The quality of these layers, with respect to particle emission and the distribution of trace elements, was evaluated by EPMA and 3D-SIMS imaging. Further improvement of the sintering process led to a material with a completely homogeneous distribution of C, H, N, O and S to minimise the outgassing and diffusion of impurities.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00321315
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