Keywords:
Solids-Electric properties.
;
Materials-Electric properties.
;
Energy-band theory of solids.
;
Electronic books.
Description / Table of Contents:
Informal and accessible writing style, simple treatment of maths, and a clear guide to applications have made this a classic text in electrical and electronic engineering. Features fundamental ideas for understanding the electrical properties of materials. Topics are selected to explain the operation of devices with applications in engineering.
Type of Medium:
Online Resource
Pages:
1 online resource (513 pages)
Edition:
10th ed.
ISBN:
9780192565563
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=5516020
DDC:
620.1/1297
Language:
English
Note:
Cover -- Copright -- Preface to the tenth edition -- Contents -- Data on specific materials in text -- Introduction -- 1. The electron as a particle -- 1.1 Introduction -- 1.2 The effect of an electric field-conductivity and Ohm's law -- 1.3 The hydrodynamicmodel of electron flow -- 1.4 The Hall effect -- 1.5 Electromagnetic waves in solids -- 1.6 Waves in the presence of an appliedmagnetic field: cyclotron resonance -- 1.7 Plasma waves -- 1.8 Johnson noise -- 1.9 Heat -- Exercises -- 2. The electron as a wave -- 2.1 Introduction -- 2.2 The electron microscope -- 2.3 Some properties of waves -- 2.4 Applications to electrons -- 2.5 Two analogie -- Exercises -- 3. The electron -- 3.1 Introduction -- 3.2 Schrödinger's equation -- 3.3 Solutions of Schrödinger's equation -- 3.4 The electron as a wave -- 3.5 The electron as a particle -- 3.6 The electron meeting a potential barrier -- 3.7 Two analogies -- 3.8 The electron in a potential well -- 3.9 The potential well with a rigid wall -- 3.10 The uncertainty relationship -- 3.11 Philosophical implications -- Exercises -- 4. The hydrogen atom and the4 periodic table -- 4.1 The hydrogen atom -- 4.2 Quantum numbers -- 4.3 Electron spin and Pauli's exclusion principle -- 4.4 The periodic table -- Exercises -- 5. Bonds -- 5.1 Introduction -- 5.2 General mechanical properties of bonds -- 5.3 Bond types -- 5.3.1 Ionic bonds -- 5.3.2 Metallic bonds -- 5.3.3 The covalent bond -- 5.3.4 The van der Waals bond -- 5.3.5 Mixed bonds -- 5.3.6 Carbon again -- 5.4 Feynman's coupledmode approach -- 5.5 Nuclear forces -- 5.6 The hydrogen molecule -- 5.7 An analogy -- Exercises -- 6. The free electron6 theory of metals -- 6.1 Free electrons -- 6.2 The density of states and the Fermi-Dirac distribution -- 6.3 The specific heat of electrons -- 6.4 The work function -- 6.5 Thermionic emission -- 6.6 The Schottky effect.
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6.7 Field emission -- 6.8 The field-emissionmicroscope -- 6.9 The photoelectric effect -- 6.10 Quartz-halogen lamps -- 6.11 The junction between two metals -- Exercises -- 7. The band theory of solids -- 7.1 Introduction -- 7.2 The Kronig-Penneymodel -- 7.3 The Ziman model -- 7.4 The Feynmanmodel -- 7.5 The tight binding model -- 7.6 The effectivemass -- 7.7 The effective number of free electrons -- 7.8 The number of possible states per band -- 7.9 Metals and insulators -- 7.10 Holes -- 7.11 Divalent metals -- 7.12 Finite temperatures -- 7.13 Concluding remarks -- Exercises -- 8. Semiconductors -- 8.1 Introduction -- 8.2 Intrinsic semiconductors -- 8.3 Extrinsic semiconductors -- 8.4 Scattering -- 8.5 A relationship between electron and hole densities -- 8.6 III-V and II-VI compounds -- 8.7 Non-equilibrium processes -- 8.8 Real semiconductors -- 8.9 Amorphous semiconductors -- 8.10 Measurement of semiconductor properties -- 8.10.1 Mobility -- 8.10.2 Hall coefficient -- 8.10.3 Effective mass -- 8.10.4 Energy gap -- 8.10.5 Carrier lifetime -- 8.11 Preparation of pure and controlled-impurity single-crystal semiconductors -- 8.11.1 Crystal growth from the melt -- 8.11.2 Zone refining -- 8.11.3 Modern methods of silicon purification -- 8.11.4 Epitaxial growth -- 8.11.5 Molecular beam epitaxy -- 8.11.6 Metal-organic chemical vapour deposition -- 8.11.7 Hydride vapour phase epitaxy (HVPE) for nitride devices -- Exercises -- 9. Principles of semiconductor9 devices -- 9.1 Introduction -- 9.2 The p-n junction in equilibrium -- 9.3 Rectification -- 9.4 Injection -- 9.5 Junction capacity -- 9.6 The transistor -- 9.7 Metal-semiconductor junctions -- 9.8 The role of surface states -- real metal-semiconductor junctions -- 9.9 Metal-insulator-semiconductor junctions -- 9.10 The tunnel diode -- 9.11 The backward diode -- 9.12 The Zener diode and the avalanche diode.
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9.12.1 Zener breakdown -- 9.12.2 Avalanche breakdown -- 9.13 Varactor diodes -- 9.14 MOSFET -- 9.15 Heterostructures -- 9.16 Wide bandgap semiconductors (WBG) -- 9.17 Charge-coupled devices -- 9.18 Silicon controlled rectifier -- 9.19 The Gunn effect -- 9.20 Strain gauges -- 9.21 Measurement ofmagnetic field by the Hall effect -- 9.22 Gas sensors -- 9.23 Microelectronic circuits -- 9.24 Plasma etching -- 9.25 Recent techniques for overcoming limitations -- 9.26 Building in the third dimension -- 9.27 Microelectro-mechanical systems (MEMS) -- 9.27.1 A movable mirror -- 9.27.2 A mass spectrometer on a chip -- 9.28 Nanoelectronics -- 9.29 Social implications -- Exercises -- 10. Dielectric materials -- 10.1 Introduction -- 10.2 Macroscopic approach -- 10.3 Microscopic approach -- 10.4 Types of polarization -- 10.5 The complex dielectric constant and the refractive index -- 10.6 Frequency response -- 10.7 Anomalous dispersion -- 10.8 Polar and non-polar materials -- 10.9 The Debye equation -- 10.10 The effective field -- 10.11 Acoustic waves -- 10.12 Dielectric breakdown -- 10.12.1 Intrinsic breakdown -- 10.12.2 Thermal breakdown -- 10.12.3 Discharge breakdown -- 10.13 Piezoelectricity, pyroelectricity, and ferroelectricity -- 10.13.1 Piezoelectricity -- 10.13.2 Pyroelectricity -- 10.13.3 Ferroelectrics -- 10.14 Interaction of optical phonons with drifting electrons -- 10.15 Optical fibres -- 10.16 The Xerox process -- 10.17 Liquid crystals -- 10.18 Dielectrophoresis -- Exercises -- 11. Magneticmaterials -- 11.1 Introduction -- 11.2 Macroscopic approach -- 11.3 Microscopic theory (phenomenological) -- 11.4 Domains and the hysteresis curve -- 11.5 Softmagneticmaterials -- 11.6 Hardmagneticmaterials (permanentmagnets) -- 11.7 Microscopic theory (quantum-mechanical) -- 11.7.1 The Stern-Gerlach experiment -- 11.7.2 Paramagnetism -- 11.7.3 Paramagnetic solids.
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11.7.4 Antiferromagnetism -- 11.7.5 Ferromagnetism -- 11.7.6 Ferrimagnetism -- 11.7.7 Garnets -- 11.7.8 Helimagnetism -- 11.8 Magnetic resonance -- 11.8.1 Paramagnetic resonance -- 11.8.2 Electron spin resonance -- 11.8.3 Ferromagnetic, antiferromagnetic, and ferrimagnetic resonance -- 11.8.4 Nuclear magnetic resonance -- 11.8.5 Cyclotron resonance -- 11.9 The quantum Hall effect -- 11.9.1 Metrology -- 11.10 Magnetoelectric effect -- 11.11 Biferroics -- 11.12 Magnetoreception -- 11.13 Magnetoresistance -- 11.14 Spintronics -- 11.14.1 Spin current -- 11.14.2 Spin tunnelling -- 11.14.3 Spin waves and magnons -- 11.14.4 Spin Hall effect and its inverse -- 11.14.5 Spin and light -- 11.14.6 Spin transfer torque -- 11.14.7 Spins producing nematic phase -- 11.15 Some applications -- 11.15.1 Isolators -- 11.15.2 Sensors -- 11.15.3 Magnetic read-heads -- 11.15.4 Electric motors -- Exercises -- 12. Lasers -- 12.1 Equilibrium -- 12.2 Two-state systems -- 12.3 Lineshape function -- 12.4 Absorption and amplification -- 12.5 Resonators and conditions of oscillation -- 12.6 Some practical laser systems -- 12.6.1 Solid-state lasers -- 12.6.2 The gaseous discharge laser -- 12.6.3 Dye lasers -- 12.6.4 Gas-dynamic lasers -- 12.6.5 Excimer lasers -- 12.6.6 Chemical lasers -- 12.6.7 Fibre lasers -- 12.7 Semiconductor lasers -- 12.7.1 Fundamentals -- 12.7.2 Wells, wires, and dots -- 12.7.3 Bandgap engineering -- 12.7.4 Quantum cascade lasers -- 12.8 Laser modes and control techniques -- 12.8.1 Transverse modes -- 12.8.2 Axial modes -- 12.8.3 Q switching -- 12.8.4 Cavity dumping -- 12.8.5 Mode locking -- 12.9 Parametric oscillators -- 12.10 Optical fibre amplifiers -- 12.11 Masers -- 12.12 Noise -- 12.13 Applications -- 12.13.1 Nonlinear optics -- 12.13.2 Spectroscopy -- 12.13.3 Photochemistry -- 12.13.4 Study of rapid events -- 12.13.5 Plasma diagnostics.
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12.13.6 Plasma heating -- 12.13.7 Acoustics -- 12.13.8 Genetics -- 12.13.9 Metrology -- 12.13.10 Manipulation of atoms by light -- 12.13.11 Optical radar -- 12.13.12 Optical discs -- 12.13.13 Medical applications -- 12.13.14 Machining -- 12.13.15 Sensors -- 12.13.16 Communications -- 12.13.17 Nuclear applications -- 12.13.18 Holography -- 12.13.19 Laser printing -- 12.13.20 Raman scattering -- 12.14 The atom laser -- Exercises -- 13. Optoelectronics -- 13.1 Introduction -- 13.2 Light detectors -- 13.3 Light emitting diodes (LEDs) -- 13.3.1 Operation -- 13.3.2 Advantages, disadvantages, and applications -- 13.4 Electro-optic, photorefractive, and nonlinearmaterials -- 13.5 Volume holography and phase conjugation -- 13.6 Acousto-optic interaction -- 13.7 Opto-acoustic interaction -- 13.8 Integrated optics -- 13.8.1 Waveguides -- 13.8.2 Phase shifter -- 13.8.3 Directional coupler -- 13.8.4 Filters -- 13.9 Spatial light modulators -- 13.10 Nonlinear Fabry-Perot cavities -- 13.11 Optical switching -- 13.12 Electro-absorption in quantum well structures -- 13.12.1 Excitons -- 13.12.2 Excitons in quantum wells -- 13.12.3 Electro-absorption -- 13.12.4 Applications -- Exercises -- 14. Superconductivity -- 14.1 Introduction -- 14.2 The effect of amagnetic field -- 14.2.1 The critical magnetic field -- 14.2.2 The Meissner effect -- 14.3 Microscopic theory -- 14.4 Thermodynamical treatment -- 14.5 Surface energy -- 14.6 The Landau-Ginzburg theory -- 14.7 The energy gap -- 14.8 Some applications -- 14.8.1 High-field magnets -- 14.8.2 Switches and memory elements -- 14.8.3 Magnetometers -- 14.8.4 Metrology -- 14.8.5 Suspension systems and motors -- 14.8.6 Radiation detectors -- 14.8.7 Heat valves -- 14.9 High-Tc superconductors -- 14.10 New superconductors -- 14.11 Quantum computers and the superconducting qubit -- 14.11.1 Introduction.
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14.11.2 Josephson junctions again.
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