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  • 1
    Online Resource
    Online Resource
    Magnetic Ions in Crystals. (1997)
    Princeton :Princeton University Press,
    Details
    Keywords: Electronic books.
    Description / Table of Contents: No detailed description available for "Magnetic Ions in Crystals".
    Type of Medium: Online Resource
    Pages: 1 online resource (268 pages)
    Edition: 1st ed.
    ISBN: 9781400864461
    Series Statement: Princeton Legacy Library ; v.351
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=1700132
    DDC: 530.4/12
    Language: English
    Note: Cover.
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    GEOMAR EBL
  • 2
    Electronic Resource
    Electronic Resource
    Imaging of plant-thorn synovitis (2000)
    Springer
    Skeletal radiology 29 (2000), S. 605-608 
    Details
    ISSN: 1432-2161
    Keywords: Keywords Plant-thorn synovitis ; Monoarticular arthritis ; Elbow ; Magnetic resonance imaging ; Ultrasound ; Power Doppler
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract  We describe a case of plant-thorn synovitis of the elbow resulting from a thorn injury. This caused recurrent pain and swelling of the elbow over a 3-month period. A magnetic resonance imaging examination was initially requested to exclude septic arthritis, and demonstrated a joint effusion, synovitis, and a 2-cm linear opacity embedded in the synovium. Ultrasound was performed prior to surgery to confirm these findings and provide accurate localization of the thorn fragment, later removed at surgery. To our knowledge this is the first example of this condition that has been confirmed by radiological imaging prior to surgery.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002560000244
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Volatiles from Oranges. III. The Structure of Sinensal1 (1965)
    s.l. : American Chemical Society
    The @journal of organic chemistry 30 (1965), S. 1690-1692 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01016a529
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    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Characterization of a remote hydrogen plasma reactor with electron spin resonance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2631-2634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas phase chemical reactions, of importance in the deposition of amorphous semiconductors, were studied in a remote hydrogen plasma reactor with electron spin resonance (ESR). The following reactant pairs (and their observed room-temperature rate coefficients) were characterized: (1) H+SiH4(2.4×1011 cm3 mole−1s−1), (2) D+SiH4 (2.1×1011 cm3 mole−1 s−1), and (3) H+C2H2 (1.2×1010 cm3 mole−1 s−1). The interpretation of these coefficients in terms of primary and secondary gas phase reactions is discussed, and the values are compared where possible with previously published data. In addition, the paramagnetic centers of the silicon-based film that is deposited in situ during the ESR measurement can now be microscopically identified in light of recent studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348655
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: "Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma'' [J. Appl. Phys. 71, 2628 (1992)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4727-4727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354101
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2628-2631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In hydrogenated amorphous silicon it is demonstrated that the maximum compressive intrinsic stress correlates with the optimum electronic properties. Undoped films were deposited over a range of temperatures in a remote hydrogen plasma (RHP) reactor and, for comparison, in a rf glow discharge (GD) system. The dependence of the stress on deposition temperature is qualitatively identical for the two reactors. Quantitatively, both the maximum compressive stress and the optimized electronic properties (e.g., minimum defect density) are obtained at 400 °C for the RHP films and near 250 °C for the GD films. Additionally, it is demonstrated that the transition from amorphous to microcrystalline silicon, induced by high hydrogen dilution, is accompanied by a reduction in compressive stress. Formation of compressive stress during RHP growth is ascribed to the insertion of hydrogen into the rigid silicon network immediately beneath the growing surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351057
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  • 7
    Electronic Resource
    Electronic Resource
    Identification of electron and hole traps in KH2PO4 crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 47-52 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance (EPR) has been used to characterize a hole trap and several electron traps in single crystals of potassium dihydrogen phosphate (KH2PO4 or KDP). The paramagnetic charge states of these centers are produced by ionizing radiation (e.g., x rays or a 266 nm beam from a pulsed Nd:YAG laser) and are stable for days and even weeks at room temperature. One center consists of a hole trapped on an oxygen ion adjacent to a silicon impurity located on a phosphorus site. This defect has a small, but easily observed, hyperfine interaction with the adjacent substitutional proton. The other centers are formed when an electron is trapped at an oxygen vacancy. These latter defects are best described as (PO3)2− molecular ions, where the primary phosphorus nucleus is responsible for a large hyperfine splitting (500–800 G in magnitude). Five EPR spectra representing variations of these oxygen vacancy centers are observed, with the differences being attributed to the relative position of a nearby cation vacancy, either a missing proton or potassium. An angular study of the EPR spectra, conducted at room temperature, provided principal values and principal directions for the g matrices and hyperfine matrices for the hole center and two of the electron centers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320030
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  • 8
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance of platinum impurities in KTiOPO4 crystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8682-8687 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of KTiOPO4 (KTP) often contain trace amounts of isolated platinum impurities. When present in sufficient concentration, these ions increase the KTP crystal's susceptibility to form gray tracks during frequency doubling of high-power laser beams. Electron paramagnetic resonance (EPR) has been used to characterize three platinum centers in a crystal of KTiOPO4. Initially, the platinum ions are present in nonparamagnetic forms. Exposure to ionizing radiation (i.e., x rays or above-band-gap laser beams) at room temperature converts them into paramagnetic centers. Once formed, these centers are stable for weeks at room temperature; however, their EPR spectra can only be observed at temperatures near or below 30 K. An angular study provided principal values and principal directions for the g matrices and the platinum hyperfine matrices. The Pt(A) center has principal g values of 1.9397, 2.4463, and 2.5900 and is assigned to a Pt3+ ion substituting for a Ti4+ ion. In contrast, the Pt(B) center has principal g values of 1.6019, 1.9754, and 2.7788 and the Pt(C) center has values of 1.4656, 1.8597, and 2.9576. We suggest that these latter two centers are Pt+ ions substituting for K+ ions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373596
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  • 9
    Electronic Resource
    Electronic Resource
    Identification of a Pb-related Ti3+ center in flux-grown KTiOPO4 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6239-6244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) have been used to identify a new Ti3+ center in KTiOPO4 crystals containing lead impurities. Many of the K+ vacancies in this set of KTP crystals are compensated nonlocally by Pb2+ ions substituting for K+ ions. During exposure to ionizing radiation (either 60 kV x rays or 355 nm photons from a tripled Nd:YAG laser), "free" electrons are trapped on Ti4+ ions near isolated Pb2+ ions, thus forming the perturbed Ti3+ ions observed with EPR and ENDOR. Four distinct Pb-related Ti3+ centers are formed by a 77 K irradiation, but only one remains after a 5 min anneal at 180 K. This latter defect, labeled the [Ti3+–Pb2+]A center, is thermally unstable above 250 K. Angular dependence data were used to determine the g matrix, one 207Pb hyperfine matrix, and two 31P hyperfine matrices for the [Ti3+–Pb2+]A center. More generally, we note that oxygen-vacancy-associated Ti3+ centers could not be formed in these Pb-containing KTP crystals. Replacing oxygen-vacancy-associated Ti3+ centers with the less stable [Ti3+–Pb2+] centers is expected to increase the gray-track resistance of KTP crystals used to generate the second harmonic of high power, near-infrared lasers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315624
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  • 10
    Electronic Resource
    Electronic Resource
    Volatiles from Oranges. Oxygenated Compounds Identified by Infrared, Proton Magnetic Resonance, and Mass Spectra (1966)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 14 (1966), S. 447-449 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf60147a002
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