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  • 1
    Online Resource
    Online Resource
    Forschungsvorhaben 7.2.2: Teilverbund: Mikrobieller Abbau der Restölfraktion von mineralölkontaminierten Böden unter Einsatz fettsäuremodifizierter Aminosäuren - Synthese der Säuren : Abschlußbericht ; Projektlaufzeit: vom 01.01.1998 bis 30.06.1999 (2000)
    Wuppertal : FB 9, Organische Chemie, Berg. Univ.-GH
    Details Availability
    Keywords: Forschungsbericht
    Type of Medium: Online Resource
    Pages: 48 p. = 511 Kb., text and images
    Edition: [Elektronische Ressource]
    URL: https://edocs.tib.eu/files/e001/319719995.pdf
    URL: https://edocs.tib.eu/files/e001/319719995l.pdf
    Language: German
    Note: nIndex. - Contract BMBF 1471090 , Differences between the printed and electronic version of the document are possible , Systemvoraussetzungen: Acrobat Reader.
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  • 2
    Online Resource
    Online Resource
    Biotechnologische und chemische Modifizierung pflanzlicher Proteine: Neuartige Bindemittel aus Weizenkleber für die Papierherstellung und -verarbeitung : BMVEL-Forschungsverbundvorhaben ; Abschlussbericht (2005)
    Wuppertal : FB C - Organische Chemie, Univ. [u.a.]
    Details Availability
    Keywords: Forschungsbericht
    Type of Medium: Online Resource
    Pages: Online-Ressource (38 S., 1,12 MB) , Ill., graph. Darst.
    URL: https://edocs.tib.eu/files/e01fb07/543808017.pdf
    URL: https://doi.org/10.2314/GBV:543808017
    URL: https://edocs.tib.eu/files/e01fb07/543808017l.pdf
    DOI: 10.2314/GBV:543808017
    Language: German
    Note: Förderkennzeichen BMVEL 22006100 - BMVEL 22006100. - Verbund-Nr. 01023348 , Unterschiede zwischen dem gedruckten Dokument und der elektronischen Ressource können nicht ausgeschlossen werden , Auch als gedr. Ausg. vorhanden , Systemvoraussetzungen: Acrobat reader.
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  • 3
    Online Resource
    Online Resource
    Oberflächenphysik : Grundlagen und Methoden. (2013)
    Berlin/München/Boston :Walter de Gruyter GmbH,
    Details
    Keywords: Surfaces (Physics). ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (179 pages)
    Edition: 1st ed.
    ISBN: 9783486856200
    URL: https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=1377100
    Language: German
    Note: Intro -- Vorwort -- Legende -- Grundlagen -- 1 Eigenschaften von Oberflächen -- 1.1 Morphologie und atomare Struktur -- 1.1.1 Oberflächenkristallographie -- 1.1.2 Übergitter und Überstrukturen -- 1.1.3 Oberflächenrelaxation -- 1.1.4 Oberflächenrekonstruktion -- 1.2 Elektronische Struktur -- 1.2.1 Blochtheorem -- 1.2.2 Oberflächenbrillouinzonen -- 1.2.3 Projizierte Volumenbandstruktur -- 1.2.4 Oberflächenzustände -- 1.2.5 Austrittsarbeit -- 1.3 Gitterschwingungen an Oberflächen -- 2 Prozesse an Oberflächen -- 2.1 Energieverlustprozesse von Elektronen -- 2.1.1 Energieverteilung gestreuter Elektronen -- 2.1.2 Inelastische mittlere freieWeglänge -- 2.2 Adsorption, Desorption und Diffusion -- 2.2.1 Adsorption -- 2.2.2 Desorption -- 2.2.3 Diffusion -- 2.3 Schichtwachstum und Epitaxie -- 2.3.1 Wachstumsmodi -- 2.3.2 Keimbildung -- 2.3.3 Epitaxie -- 2.3.4 Nanostrukturierung durch Selbstorganisation -- Methoden -- 3 Präparation von Oberflächen -- 3.1 Quellen von Verunreinigungen -- 3.2 Erzeugung sauberer Einkristalloberflächen -- 3.2.1 Spalten -- 3.2.2 Heizen -- 3.2.3 Chemisches Reinigen -- 3.2.4 Ioneninduzierte Zerstäubung -- 3.3 Erzeugung modifizierter Oberflächen -- 3.3.1 Adsorbat-bedeckte Oberflächen -- 3.3.2 Schichten auf Oberflächen -- 4 Methoden zur Bestimmung der geometrischen Struktur -- 4.1 Beugungsmethoden zur Strukturbestimmung -- 4.2 Kinematische Beschreibung der Beugung -- 4.3 Beugung langsamer Elektronen -- 4.3.1 Experiment -- 4.3.2 Geometrie des Beugungsbildes -- 4.3.3 Strukturbestimmung -- 4.4 Beugung hoch-energetischer Elektronen -- 4.5 Oberflächenr¨ontgenbeugung -- 4.6 Heliumbeugung -- 4.7 Feinstruktur der R¨ontgenabsorption -- 5 Elektronenspektroskopien -- 5.1 Instrumentierung -- 5.1.1 Elektronen- und Photonenquellen -- 5.1.2 Energieselektive Analysatoren -- 5.1.3 Modulationstechnik -- 5.2 Elementspezifische Spektroskopie. , 5.2.1 Röntgen-Photoelektronenspektroskopie -- 5.2.2 Rumpfniveauverschiebungen -- 5.2.3 Augerelektronenspektroskopie -- 5.2.4 Linienform von Augerspektren -- 5.2.5 Qualitative und quantitative Elementanalyse -- 5.3 Oberflächenbandstrukturbestimmung -- 5.3.1 Winkelaufgelöste Photoemission -- 5.3.2 Inverse Photoemission -- 5.3.3 Zweiphotonen-Photoemission -- 5.3.4 Auswahlregeln bei Photoemission -- 5.4 Hochauflösende Spektroskopie von Oberflächenschwingungen -- 5.4.1 Grundlagen und Experiment -- 5.4.2 Wechselwirkungsmechanismen und Auswahlregeln -- 5.4.3 Anwendungsbeispiele -- 6 Rastersondenmikroskopie -- 6.1 Einleitung -- 6.1.1 Prinzip -- 6.2 Rastertunnelmikroskop -- 6.2.1 Topographische Aufnahmen -- 6.2.2 Tunnelprozess -- 6.2.3 Spektroskopie -- 6.2.4 Anwendungen und weitere Wechselwirkungsmechanismen -- 6.3 Rasterkraftmikroskop -- 6.3.1 Kräfte an Oberflächen und ihre Auswirkung im AFM -- 6.3.2 Anwendungen und weitere Wechselwirkungsmechanismen -- 7 Teilchenspektroskopien -- 7.1 Thermische Desorptionsspektroskopie -- 7.1.1 Grundlagen und Versuchsanordnung -- 7.1.2 Spektrentypen -- 7.1.3 Auswertung von Desorptionsspektren -- 7.1.4 Desorptionsspektren mit mehreren Maxima -- 7.2 Ionenstreuung -- A Anhang -- A.1 Oberflächen von hcp-Kristallen -- A.2 Bestimmung von Ebenengruppen -- A.3 Brillouinzonen und Spiegelebenen -- A.4 Energien für Augerübergänge -- Weiterführende Literatur -- Abkürzungen -- Index.
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  • 4
    Online Resource
    Online Resource
    Biologisch abbaubare Tenside aus heimischen Ölen : Abschlußbericht (2002)
    Wuppertal
    Details Availability
    Keywords: Forschungsbericht
    Type of Medium: Online Resource
    Pages: Online-Ressource (86 p., 734 Kb.) , ill., graphs
    Edition: [Elektronische Ressource]
    Series Statement: Chemische Nutzung heimischer Pflanzenöle II : Forschungsvorhaben TV 4
    URL: https://edocs.tib.eu/files/e01fb02/367801213.pdf
    URL: https://edocs.tib.eu/files/e01fb02/367801213l.pdf
    Language: German
    Note: Differences between the printed and electronic version of the document are possible. - Contract BMBF 97 NR 175 F - BMBF 22017597. - nIndex p. 81 - 84 , Also available as printed version , Systemvoraussetzungen: Acrobat reader.
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  • 5
    Electronic Resource
    Electronic Resource
    Moderatorenbericht Früherkennung des Endometriumcarcinoms (1983)
    Springer
    Archives of gynecology and obstetrics 235 (1983), S. 173-233 
    Details
    ISSN: 1432-0711
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Zusammenfassung Die Diskussion und das Vorlegen von Erfahrungsberichten im Arbeitskreis hat ergeben, daß eine Früherkennung des Endometriumcarcinoms mit geeigneten morphologischen Methoden grundsätzlich möglich ist. In mehreren Publikatonen wird von einer hohen Erfolgsrate in der Ausbeute des zytologisch aufgearbeiteten intrakavitär gewonnenen Materials gesprochen, die in einzelnen günstig gelagerten Fällen mehr als 90% erreicht. Hier handelt es sich ausschließlich um Testergebnisse vieler Geräte, die unter optimalen Bedingungen erhoben worden sind. Der Arbeitskreis äußerte die Meinung, daß dieses Ergebnis unter ambulanten Bedingungen zum gegenwärtigen Zeitpunkt kaum erreicht werden kann. Die Ursache dafür sind beeinflussende variable Faktoren, die die Auswertbarkeit des intrakavitär gewonnenen Materials einschränken, in manchen Fällen sogar unmöglich machten. Hierzu gehören u. a. Arbeitsgänge wie Materialgewinnung, die Materialverarbeitung oder das Einschätzen von besonderen anatomischen Gegebenheiten. In diesen Zusammenhang gehört auch die möglichst klare und eindeutige Beschreibung und Interpretation des morphologischen Befundes, was wiederum eine zentrale Einrichtung mit geschultem und erfahrenen Personal erfordert. Solange diese Erfordernisse nicht erfüllt sind, werden diese Methoden als Screeningverfahren im Rahmen der Früherkennung des Endometriumcarcinoms noch nicht allgemein praktikabel sein.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02428737
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  • 6
    Electronic Resource
    Electronic Resource
    Mixing of GaAs/(Ga,Al)As interfaces by Ga+ implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1433-1443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing of GaAs/(Ga,Al)As heterointerfaces by Ga+ implantation and annealing has been investigated. The damage accumulation in a GaAs/AlAs superlattice turned out to be less rapid than in a GaAs/GaAlAs quantum-well structure. Low-temperature photoluminescence (PL) spectroscopy of a GaAs/AlAs superlattice could be performed for doses as high as 1 × 1016 ions/cm2. The photoluminescence spectra exhibited several emission bands on the high energy side. The number and energy of these blue shifted peaks were found to depend on the implanted dose and as confirmed by secondary ion mass spectrometry, they could be interpreted as the emission of several quantum wells of the superlattice, disordered with different mixing rates. Two regimes were evidenced; while the depth extension of the disordering has been directly related to the post-implantation defects distribution in the high dose regime, some diffusion of these defects during annealing has been pointed out in the low dose regime. Cross-sectional transmission electron microscopy observations have confirmed the influence of the structure of the implanted sample on damage accumulation. Moreover, the decrease of the PL intensity after annealing could be related to the presence of extended residual defects in the implanted layers. The study of the influence of annealing time at 760 °C, has shown that the photoluminescence intensity can be progressively recovered, while the intermixing saturates rapidly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349554
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  • 7
    Electronic Resource
    Electronic Resource
    Damage generation and annealing in Ga+ implanted GaAs/(Ga,Al)As quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4833-4842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage generation and its annealing behavior in GaAs/(Ga,Al)As quantum wells after Ga+ implantation at room temperature is investigated by transmission electron microscopy. Its relations with the disordering of the layered structures is explored by low temperature photoluminescence spectroscopy. We find that at low doses the intermixing is activated during annealing through the diffusion of point defects, while at high doses the disordering is produced by cascade mixing. A strong segregation of the defects in the GaAs layers is observed. During implantation of a GaAs/Ga0.65Al0.35As single quantum well, the GaAs quantum-well layer accumulates damage more rapidly than the Ga0.65Al0.35As barriers. At high dose this leads to a differential amorphization of the two compounds. Using the critical damage energy density model, the amorphization thresholds of GaAs and Ga0.65Al0.35As are estimated around 26 eV/molecule and 960 eV/molecule, respectively, in our conditions of implantation. The influence of barriers in AlAs is studied. AlAs is more resistant to amorphization than Ga0.65Al0.35As and delays the amorphization of the GaAs quantum-well layer. This effect is attributed to the in situ recombination of point defects during irradiation in AlAs material as well as to some intermixing of the layers. After annealing it appears that defects can easily diffuse in Al rich materials but are trapped in GaAs. It is concluded that the ability of AlAs to prevent damage accumulation in GaAs quantum wells and to drain off the defects during annealing can be exploited for device applications. The general trends for an optimized GaAs/GaAlAs quantum well dedicated to mixing applications such as the fabrication of quantum-well wires by masked implantation is finally proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350626
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  • 8
    Electronic Resource
    Electronic Resource
    Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5012-5015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the structure of a GaAs/GaAlAs quantum well, which can promote strong mixing rates upon high-dose implantation, with good recovery of the electronic properties after annealing. This structure is employed to fabricate quantum-well wires by Ga+ masked implantation. Low-temperature photoluminescence measurements reveal large lateral modulations of the effective band gap ((approximately-greater-than)178 meV), and small lateral interdiffusion lengths (10 nm). A simple calculation shows that one-dimensional quantization energies between 11 and 20 meV can be expected in these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350601
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  • 9
    Electronic Resource
    Electronic Resource
    Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+ masked implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1444-1450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum wires were fabricated by selective intermixing of a GaAs/GaAlAs quantum well through masked Ga+ implantation and rapid thermal annealing. The evolution of the luminescence spectra of the wires with the width of the implantation masks, enabled us to characterize the lateral selectivity of our process as well as the degree of one-dimensional confinement. The lateral extent of the intermixing was estimated at 20 nm giving rise to an important penetration of aluminum into the wires. From numerical simulations of the spatial distribution of implantation-induced damage, it was concluded that some lateral diffusion of the defects occurred during annealing. However it has been possible to assess the confinement energies to be around 4 meV. The linewidth of the wires' emission turned out to increase with decreasing mask size, indicating the presence of some fluctuations of the confining potential along the wires. The roughness of the lateral definition of the wires was evaluated at 20 nm, of the same order of magnitude as the dimension of the intermixed region under the mask. Under these conditions optical excitation spectroscopy failed to detect the different one-dimensional subbands. Finally the potentialities of this method of fabrication of quantum wires are inspected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349555
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  • 10
    Electronic Resource
    Electronic Resource
    Perturbations, inhibition, and promotion of ultraviolet surface photochemistry: CH3 Br on Br/Ni(111) (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2004-2014 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The inhibition and perturbations of surface photochemistry, due to the coupling of the excited state to the surface, are discussed as it pertains to CH3 Br adsorbed on nickel. Photofragmentation of CH3 Br was observed on a brominated Ni(111) surface, with the fragmentation process being strongly perturbed at low coverages. The perturbations are attributed to charge transfer processes. Direct photofragmentation was observed as well as a surface specific dissociative electron attachment channel. Cross section values are reported for fragmentation at 193 and 248 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458033
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