Publication Date:
2021-07-30
Description:
The perovskite SrRuO3 is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report the synthesis and investigation of atomically flat artificial multilayers of SrRuO3 with the spin-orbit semimetal SrIrO3 in combination with band-structure calculations with a Hubbard U term and topological analysis. The latter reveal an electronic reconstruction and emergence of flat Ru-4dxz bands near the interface, ferromagnetic interlayer coupling, and a negative Berry-curvature contribution to the anomalous Hall effect. We analyze the Hall effect and magnetoresistance measurements as a function of the field angle from an out-of-plane towards an in-plane orientation (either parallel or perpendicular to the current direction) by a two-channel model. The magnetic easy direction is tilted by about 20∘ from the sample normal for low magnetic fields, rotating towards the out-of-plane direction by increasing fields. Fully strained epitaxial growth enables a strong anisotropy of magnetoresistance. An additional Hall effect contribution, not accounted for by the two-channel model, is compatible with stable skyrmions only up to a critical angle of roughly 45∘ from the sample normal. Within about 20∘ from the thin film plane an additional peaklike contribution to the Hall effect suggests the formation of a nontrivial spin structure.
Type:
info:eu-repo/semantics/article
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