Keywords:
Electronic books.
Description / Table of Contents:
Selected, peer reviewed papers from the 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 12-14, 2016, Knokke, Belgium.
Type of Medium:
Online Resource
Pages:
1 online resource (395 pages)
Edition:
1st ed.
ISBN:
9783035730845
Series Statement:
Solid State Phenomena Series ; v.Volume 255
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=4761135
Language:
English
Note:
Intro -- Ultra Clean Processing of Semiconductor Surfaces XIII -- Preface, Committees, Sponsor -- Table of Contents -- Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors -- Wet Selective SiGe Etch to Enable Ge Nanowire Formation -- Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability -- Surface Preparation Quality before Epitaxy our Paper's -- Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process -- The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment -- Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process -- Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas -- Tris(Trimethylsilyl)Germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces -- Applications for Surface Engineering Using Atomic Layer Etching - Invited Paper -- Chapter 2: FEOL: Surface Chemistry Groups III-V Compound Semiconductors -- Towards Atomic-Layer-Scale Processing of High Mobility Channel Materials in Acidic Solutions for N5 and N7 Technology Nodes -- Comparison of the Chemical Passivation of GaAs, In0.53Ga0.47As, and InSb with 1-Eicosanethiol -- Digital Etching of GaAs Materials: Comparison of Oxidation Treatments -- Chapter 3: FEOL: Etching -- Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation -- Selective Etching of Silicon Oxide versus Nitride with Low Oxide Etching Rate -- Metrology for High Selective Silicon Nitride Etch -- Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF3 and H2O -- Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL -- Analysis of Si Wet Etching Effect on Wafer Edge.
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Chapter 4: FEOL: Photoresist Removal, General Cleaning -- Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing -- Characterization and Development of High Dose Implanted Resist Stripping Processes -- Chemical Infiltration through Deep UV Photoresist -- Efficient Photoresist Residue Removal with 172nm Excimer Radiation -- Chapter 5: Processes of Wetting and Drying -- Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry -- Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study -- Influence of CO2 Gas Atmosphere on the Liquid Filling of Superhydrophobic Nanostructures -- Some Critical Issues in Pattern Collapse Prevention and Repair -- Watermark-Free and Efficient Spray Clean on Hydrophobic Surface with Single-Wafer Technology -- Extended-Nanofluidic Devices and the Unique Liquid Properties - Invited Paper -- Chapter 6: Mechanical Fluid Effects, Nanoparticles -- Measurement of the Frictional Force between PVA Roller Brushes and Semiconductor Wafers with Various Films Immersed in Chemicals -- Removal of Bull's Eye Signature by Optimizing Wet Cleans Recipe -- Toward CO2 Beam Cleaning of 20-nm Particles in Atmospheric Pressure -- Liquid Cell Platform to Directly Visualize Bottom-Up Assembly and Top-Down Etch Processes inside TEM -- A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning -- Post-CMP Cleaners for Tungsten at Advanced Nodes -- Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance -- Developments for Physical Cleaning Sample with High Adhesion Force Particles and Direct Measurement of its Removal Force -- Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool -- Chapter 7: Interconnect Cleaning.
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Molecular Simulation Contribution to Porous Low-k Pore Size Determination after Damage by Etch and Wet Clean Processes - Invited Paper -- Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment -- Characterization of Etch Residues Generated on Damascene Structures -- Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects -- Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal -- TiN Metal Hardmask Etch Residues Removal with AlN Etch -- High Throughput Wet Etch Solution for BEOL TiN Removal -- Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch -- The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions -- Oxygen Control for Wet Clean Process on Single Wafer Platform -- Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth -- Post CMP Wet Cleaning Influence on Cu Hillocks -- Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond -- Chapter 8: 3D Integrated Structures -- Silica Formation during Etching of Silicon Nitride in Phosphoric Acid -- Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process -- Chapter 9: Metrology, Specification and Control of Contamination -- Electrical Characterization of As-Processed Semiconductor Surfaces - Invited Paper -- Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler -- Specification of Trace Metal Contamination for Image Sensors -- Metal Removal Efficiency in High Aspect Ratio Structures -- Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces.
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A Mathematical Model Forecasting HF Adsorption onto Cu-Coated Wafers as a Function of the Airborne Concentration and Moisture -- Chapter 10: Photovoltaics -- Oxidation of Si Surfaces: Effect of Ambient Air and Water Treatments on Surface Charge and Interface State Density -- Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells -- 'Just-Clean-Enough': Optimization of Wet Chemical Cleaning Processes for Crystalline Silicon Solar Cells -- Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cells -- Chapter 11: Non-Wafer Cleaning, Mask Cleaning -- Optimization of EUV Reticle Cleaning by Evaluation of Chemistries on Wafer-Based Mimic Test Structures -- Ultra-Trace Sulfate Ion Removal on Photomasks for Haze Reduction -- 172 nm Excimer Radiation as a Technology Accelerator for Bio-Electronic Applications -- Chapter 12: Contamination Сontrol of Wafer Ambient -- Electrolyzed Water for Efficient Metal Removal -- Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics -- Inline FOUP Cleaner - The New Type FOUP Cleaner for the Next Generation -- Keyword Index -- Author Index.
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