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  • 1
    Electronic Resource
    Electronic Resource
    The effect of Si doping on the defect structure of GaN/AlN/Si(111) (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3362-3364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Si doping on the structural quality of wurtzite GaN layers grown by molecular beam epitaxy on AlN buffered (111) Si substrates is studied. The planar defect density in the grown GaN layer strongly increases with Si doping. The dislocation density at the free surface of GaN significantly decreases when Si doping overpasses a limit value. Si doping affects the misorientation of the subgrains that constitutes the mosaic structure of GaN. The increase of the planar defect density and out-plane misorientation angles of the GaN subgrains with Si doping explain the decrease of dislocations that reach the free surface of GaN. A redshift in the photoluminescence spectra together with a decrease in the c-axis lattice parameter as the Si doping increases point to an increase in the residual biaxial tensile strain in the GaN samples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123345
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  • 2
    Electronic Resource
    Electronic Resource
    Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (〈105 cm−2) and unstrained epilayers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2460-2462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation in linearly graded composition InGaAs layers grown on (001) GaAs substrates by molecular beam epitaxy is studied by transmission electron microscopy (TEM) and double crystal x-ray diffraction (DCXRD). The dislocation distribution in these layers does not coincide with the predicted equilibrium dislocation distribution [J. Tersoff, Appl. Phys. Lett. 62, 693 (1993)]. The dislocation density in the dislocation-rich layer thickness is slightly smaller than the equilibrium density. The thickness of the dislocation-rich region is different in the [110] and [11¯0] directions. A good correspondence exists between the TEM and DCXRD strain measurements. The dislocation distribution observed by TEM has made it possible to design a scheme to grow dislocation-free and unstrained top layers on linearly graded composition buffer layers. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112707
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  • 3
    Electronic Resource
    Electronic Resource
    Design of InGaAs linear graded buffer structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3334-3336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation of compositionally graded InGaAs buffers, with and without uniform cap layers, has been studied. Simple InGaAs linear-graded layers on GaAs substrates never reach complete relaxation. The residual strain in these structures produces a dislocation-free strained top region while the rest of the buffer is nearly completely relaxed through misfit dislocations, as observed by transmission electron microscopy (TEM). This strained top region is analyzed and its thickness compared with theoretical calculations. The effects of different cap layers on the relaxation behavior of the graded buffer has been studied by double crystal x-ray diffraction, TEM, and low temperature photoluminescence, and results compared with predictions of the models. The optical quality of the cap layer improves when its composition is close to the value that matches the lattice parameter of the strained surface of the grade. The design of linear graded buffers having a strain-free cap layer with high crystalline quality is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113748
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  • 4
    Electronic Resource
    Electronic Resource
    Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2688-2690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy is used to investigate GaN layers grown on Si(111) substrates by plasma-assisted molecular-beam epitaxy. These layers were grown on top of different AlN buffer layers. Multiple-beam dark-field techniques applied to both cross-sectional and planar-view samples show the presence of inversion domains. These domains grow directly from the interface with the Si(111) substrate. Such observations are related, as in the case of growth on sapphire, to the symmetry difference between wurtzite and diamond. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368373
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  • 5
    Electronic Resource
    Electronic Resource
    Emission wavelength engineering of InAs/InP(001) quantum wires (2004)
    Springer
    The European physical journal 40 (2004), S. 433-437 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. In this work we have studied the dependence of the optical properties of self-assembled InAs quantum wires (QWr) grown on InP(001) on the growth temperature of the InP cap layer, as a mean for controlling the InAs QWr size. Our main result is that we can tune the emission wavelength of InAs QWr either at 1.3 $\mu $ m or 1.55 $\mu $ m at room temperature. We suggest that the role of growth temperature is to modify the As/P exchange at the InAs QWr/InP cap layer interface and consequently the amount of InAs involved in the nanostructure. In this way, due to the enhancement of the As/P exchange, the higher the growth temperature of the cap layer, the smaller in height the InAs quantum wires. Accordingly, the emission wavelength is blue shifted with InP cap layer growth temperature as the electron and hole ground state moves towards higher energies. Optical studies related to the dynamics of carrier recombination and light emission quenching with temperature are also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epjb/e2004-00228-4
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