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Interface formation of Bi on ceramic ZnO: A simple model varistor grain boundary (1994)

Magnusson, K. O. ; Wiklund, S.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 7405-7409

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The Schottky barrier formation between Bi and polycrystalline, ceramic ZnO has been studied with photoelectron spectroscopy (PES) under ultrahigh-vacuum conditions. This system is a simple model of a varistor compound. Evaporation of Bi on highly n-doped (Al) sintered ZnO surfaces, fractured in situ and held at room temperature, results in considerable upward band bending. After evaporation of 10 A(ring) of Bi (approximately 3 monolayer coverage), the Bi-induced band bending amounts to 0.43 eV, as evident from the energy shift of the Bi 5d emission in PES. From valence-band and band-gap studies using ultraviolet PES, the states responsible for the observed band bending could be identified: Bi induces states in the ZnO band gap at 0.9 eV above the valence-band maximum. The filling of this high density of band-gap states results in a pinning of the surface Fermi level which makes the band bending proportional to the Bi coverage, with a rapid increase during the formation of the first monolayer and markedly slower thereafter. These results show the importance of Bi in the formation of the varistor Schottky barriers. © 1994 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357966

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The electronic structure of alkali-metal layers on semiconductor surfaces (1992)

Reihl, B. ; Dudde, R. ; Johansson, L. S. O. ; [et al.]

Springer

Applied physics 55 (1992), S. 449-460

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ISSN: 1432-0630

Keywords: 71.30.+h ; 73.40.Ns ; 79.60.Gs

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Alkali-metal layers on semiconductor surfaces are model systems for metal-semiconductor contacts, Schottky barriers, and metallization processes. The strong decrease of the work function as a function of alkali-metal coverage is also technically made use of. Recently, however, interest in these systems is growing owing to ongoing controversial discussions about questions like: Is the adsorbate system at monolayer coverage metallic or semiconducting, and does the metallization take place in the alkali overlayer or in the top layer of the semiconductor? Is the bonding ionic or covalent? What ist the absolute coverage at saturation? What are the adsorption sites? Do all alkali metals behave similar on the same semiconductor surface? We try to answer some of the questions for Li, Na, K and Cs on Si(111)(2×1), K and Cs on Si(111)(7×7) and on GaAs(110), and Na and K on Si(100)(2×1) employing the techniques of direct and inverse photoemission.