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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4916-4918 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exchange anisotropy in NiFe/NiMn and NiFe/IrMn exchange coupled films was studied as a function of temperature using vibrating sample magnetometry. The exchange field was measured using three different methods: (1) as a shift of the hysteresis loop measured in an external field applied parallel to the exchange field direction; (2) calculated from the initial susceptibility in the field applied perpendicular to the exchange field; and (3) calculated from the shift of minor reversible hysteresis loops measured in external fields applied in a few different directions close to the perpendicular to the exchange field. The values of the exchange field in NiFe/NiMn samples measured using methods 2 and 3 were similar and approximately twice as high as the values measured using method 1. For the NiFe/IrMn samples methods 2 and 3 gave exchange field values slightly exceeding the values obtained using method 1. The results are explained using a model in which it is assumed that the interfacial interactions between antiferromagnetic and ferromagnetic layers induce unidirectional and uniaxial anisotropy in the ferromagnetic layer. The temperature dependence of induced interfacial uniaxial anisotropy was calculated from the experimental data. For the NiFe/NiMn samples, the temperature dependence of the induced uniaxial anisotropy was significantly different from that of the unidirectional anisotropy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5033-5035 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Giant magnetoresistance (GMR) responses were studied as a function of applied measurement field angle in FeMn and NiMn pinned spin valves. As the measurement field varies away from the pinning field direction, the peak GMR ratio and the free layer coercivity decrease. The GMR curve changes from unsymmetrical to symmetrical with respect to the applied field polarity. The GMR responses from the component parallel to the applied field are proportional to the cosine of the angle between the pinning and the applied field. The results can be described well by a simple vector model, and an empirical method to measure the pinning field rotation is established. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of spin valve films with synthetic antiferromagnet (SAF) pinned by antiferromagnetic IrMn, NiO, and NiMn layers were studied. The SAF layer enhances the thermal stability in general; however, the blocking temperature (and the blocking temperature distribution) of the antiferromagnet is still important for the magnetic rigidity of the pinned layer. Once the temperature reaches the blocking temperature the SAF layer can go into either the spin flip or flop state, depending upon the magnetic moment ratio of the reference layer and pinned layers. The GMR linear head response can be distorted for nonlinearity. The NiMn pinned SAF structure shows magnetic and thermal stability which makes it practical for the real products. A high GMR of 11% can be obtained in both bottom and top NiMn SAF spin valves by advanced processes. Recording heads were built using such stacks which demonstrated recording areal density of 20 Gbit/in.2 and beyond. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5407-5409 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated 23.8 Gb/in.2 areal density using a merged read-write grant magnetoresistive head, with an oriented thin film medium tested with broadband electronics and enhanced EPR4 channels. The medium had high signal to noise ratio metrics that was robust unto temperatures as high as 75 °C. A unique aspect of the head design at such a narrow track width is the simultaneous enhancement of the transducer sensitivity while keeping product and system manufacturability in the forefront. The areal density was demonstrated at a track density of 45.8 k tracks/in., using photolithographically defined poles and linear density of 520 k bits/in. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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