Keywords:
Thin films, Multilayered.
;
Ion bombardment.
;
Sputtering (Physics).
;
Semiconductor films.
;
Electronic books.
Description / Table of Contents:
This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams. Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in this field.
Type of Medium:
Online Resource
Pages:
1 online resource (458 pages)
Edition:
1st ed.
ISBN:
9780444599087
Series Statement:
Beam Modification of Materials Series ; v.Volume 3
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=1180731
DDC:
530.4/1
Language:
English
Note:
Front Cover -- Ion Beam Assisted Film Growth -- Copyright Page -- Table of Contents -- Chapter 1. Overview -- 1.1 Versatile Method for Ion Beam Deposition -- 1.2 Leading Arrangements and Principles -- 1.3 A View of the Future -- References -- Chapter 2. Film Growth by Ion Beam and Plasma Discharge Sputtering Method -- 2.1 Introduction -- 2.2 Background on the Theory and Preface of Sputtering -- 2.3 Tasks Problems and Techniques Associated with the Formation of High Quality Compound Material by Sputter-Deposition Method -- 2.4 Experimental Results for Sputtered Compound Semiconductors -- 2.5 A View to the Future -- References -- Chapter 3. Preparation and Characterization of II-VI Semiconductor Films by Sputtering -- 3.1 Introduction -- 3.2 Process of Sputter Deposition -- 3.3 Preparation of the Wide-Gap Films -- 3.4 Preparation of the Narrow-Gap Films -- 3.5 Potentiality and Future Developments of Sputter Deposition -- 3.6 Summary -- Acknowledgments -- References -- Chapter 4. Sputtering Yield -- 4.1 Introduction -- 4.2 Sputtering Yield of Monatomic Solids at Normal Incidence -- 4.3 Sputtering Yield of Monatomic Solid at Glancing Angles -- 4.4. Sputtering of Multi-Component Systems -- 4.5 Angular Distribution of Sputtered Atoms -- 4.6 Concluding Remarks -- References -- List of Symbols -- Chapter 5. Low Energy Ion/Surface Interaction During Film Growth from the Vapor Phase -- 5.1 Introduction -- 5.2 Nucleation and the Early Stages of Growth -- 5.3 Film Growth -- 5.4 Elemental Incorporation Probabilities -- 5.5 Processing Applications -- 5.6 Conclusions -- Acknowledgments -- References -- Appendix (List of Symbols) -- Chapter 6. Ion Beam Mixing -- 6.1 Introduction -- 6.2 Basic Experiments -- 6.3 Theory -- 6.4 Ion Beam Mixing of Metal-Metal Multilayer System -- 6.5 Conclusion -- Acknowledgments -- References.
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Chapter 7A. Partially Ionized Molecular Beam Epitaxy -- 7A.1 Introduction -- 7A.2 Principle of Implant-Epitaxy -- 7A.3 Apparatus for Implant-Epitaxy -- 7A.4 Low Temperature Si Epitaxy and Impurity Doping by PI-MBE -- 7A.5 Heavy Arsenic Doping into Si Films -- 7A.6 Application of Implant-Epitaxy to Junction Formation -- 7A.7 Conclusion -- References -- Chapter 7B. Ionized Cluster Beam Deposition -- 7B.1 Introduction -- 7B.2 Cluster Formation Process -- 7B.3 Computer Simulation of Cluster Formation -- 7B.4 Cluster Size Distribution -- 7B.5 Structure of Clusters -- 7B.6 Kinetic Energy Range of Ionized and Accelerated Clusters -- 7B.7 ICB Deposition Equipment -- 7B.8 Film Formation Mechanisms -- 7B.9 Film Deposition by ICB -- 7B.10 Film Deposition by Reactive ICB Deposition -- 7B.11 Film Deposition by Simultaneous Use of ICB and Microwave Ion Sources -- 7B.12 Conclusions -- References -- Chapter 8. Direct Ion Beam Deposition -- 8.1 Introduction -- 8.2 Role of Ion Bombardment in Film Growth -- 8.3 System Design Concept -- 8.4 Film Growth by Direct Ion Beam Deposition -- 8.5 Concluding Remarks -- References -- Chapter 9. Film Growth by Utilizing Ionized Carbon Beam -- 9.1 Introduction -- 9.2 Ion Beam Deposition System -- 9.3 Deposition of Carbon Films -- 9.4 Deposition of Silicon Carbide Films -- 9.5 Conclusions -- Acknowledgments -- References -- Chapter 10. Molecular Beam Epitaxy of III-V Compound Semiconductor Using Mass Separated Low Energy Ion Beam -- 10.1 Introduction -- 10.2 Growth Method -- 10.3 Growth System -- 10.4 Sputtering by Low Energy Ion Irradiaiton -- 10.5 Homoepitaxial Growth of GaAs -- 10.6 Homoepitaxial Growth of InP -- 10.7 Heteroepitaxial Growth of InxGa.|_xAs P on InP -- 10.8 Application to Heteroepitaxy -- References -- Chapter 11. Ion Beam Synthesis of Films -- 11.1 introduction -- 11.2 Mechanisms -- 11.3 Examples of Synthesis.
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11.4 Compounds in Semiconductors -- Acknowledgments -- References -- Subject Index -- Material Index.
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