Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 338-340
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
While epitaxial CaF2 films grown on Si(111) at temperatures above 550 °C exhibited flat capacitance-voltage (C-V) curves, suggesting a pinned CaF2/Si(111) interface, we have observed unpinned C-V curves from as-deposited epitaxial CaF2 grown at 300 °C. Our results demonstrate that C-V characteristics of CaF2/Si(111) are determined by the thermal history, rather than the crystalline quality, of the CaF2 film. Correlations among CaF2/Si interface state density, thermal stress, and atomic bonding at the interface are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106650
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