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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1615-1621 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two Si atomic layer epitaxy schemes based on Cl/H exchange chemistry are compared by deposition of Si on Ge(100). Time-of-flight direct recoiling and reflection high-energy electron diffraction are used to characterize the very thin Si layers. It is shown that alternating exposure to SiCl2H2 and atomic hydrogen deposits Si in a process that is self-limiting. Growth of Si by this method results in either alloy formation or Si island growth as low as 465 °C on Ge(100), which prohibits a simple measurement of Si thickness/cycle. In contrast, alternating exposure to Si2Cl6 and Si2H6 below 500 °C results in Si deposition with uniform thickness. Plots of direct recoil intensity versus incident angle (with respect to the surface plane) are a sensitive probe of the thin layer morphology.
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 992-1002 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Studies of hydrogen isothermal desorption and abstraction from polycrystalline diamond surfaces are presented. The surface H and D coverages (θH and θD) are measured in real time by mass analyzing the recoiled ions generated in a time-of-flight scattering and recoil spectroscopy (TOF-SARS) experiment. For surface temperatures (Ts) from 825 and 920 °C, isothermal H2 desorption is 1st order in θH with a measured activation energy, ET, of 69±6 kcal/mol and a pre-exponential factor, ν, of 1010.5±0.9 s−1. For H2 desorption from diamond, the estimated ΔET based on bond energy calculations is ≈88 kcal/mol, substantially higher than the experimentally measured ET. This difference suggests π-bonding of the surface after H2 desorption is involved. Using a simple bond order argument, the π-bonding contribution is estimated to be ≈21 kcal/mol. The abstraction and replacement of absorbed H by atomic deuterium (Dat) is explained by three first-order reactions. Under a constant Dat flux, the rate of abstraction of adsorbed H by Dat is 1st order in θH, with an "apparent activation energy'' (Ea) of 0.8±0.2 kcal/mol and ν=(1.3±0.2)10−3 s−1. The low Ea and 1st order kinetics imply that H is abstracted from the surface by a generalized Eley–Rideal or direct mechanism. Using the relative rate of Dat abstraction of H to Dat adsorption on clean diamond, we estimate an upper limit for the abstraction activation barrier of 16 kcal/mol. Under identical reaction conditions, the rate for Hat abstraction of D is ≈1/3 the rate for Dat abstraction of H. We interpret this isotope effect using momentum transfer arguments. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 3301-3309 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The abstraction kinetics for atomic hydrogen (Hat) removal of chemisorbed D and atomic deuterium (Dat) removal of chemisorbed H are studied on single crystal Si surfaces. The surface H and D coverages are measured in real time by mass analyzing the recoiled H+ and D+ ion signals. On both Si(100) and Si(111) surfaces, the abstraction reactions are efficient, and have very low activation energies (approximately-equal-to)0.5–1 kcal/mol. For abstraction from surfaces containing only monohydride species, the abstraction reaction probability is (approximately-equal-to)0.36 times the adsorption rate of Hat or Dat. For the same Hat and Dat exposures, the reaction rates for Hat removal of adsorbed D and Dat removal of adsorbed H are nearly identical. All observations are consistent with a generalized Eley–Rideal abstraction mechanism, and a two-dimensional quantum-mechanical model is used to calculate reaction probabilities for these reactions. According to the model, the activation energies are due to enhanced abstraction rates from excited vibrational states of the adsorbed Si–H or Si–D bond. With SiH2 and SiH3 species present on the surface, the removal rate of H using Dat is decelerated, suggesting that the higher hydrides have a lower cross section for abstraction.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4073-4082 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using alternating exposures of Si2H6 and Si2Cl6, very thin Si layers have been grown on the Si(100) surface at temperatures (T) as low as 475 °C. Although this growth method is not truly self-limiting, some of the desired features for Si atomic layer epitaxy (ALE) are retained, as discussed here. The growth rate of new Si on Si(100) using this method is limited by the thermal desorption of H2 and HCl. Doping the surface with boron atoms can lower the growth temperature, due to a weakening of the Si—H and Si—Cl bonds on the surface as observed in the temperature programmed desorption results from H2, HCl, and SiCl2 desorption from the clean and the boron-doped Si(100) surfaces.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4245-4247 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in surface structure for thin epitaxial Si layers (Si*) grown on Si(100) below 500 °C using alternating exposures to Si precursors are presented. Two different methods for growing Si* are compared, which involve a self-limiting exposure to Si2Cl6 followed by removal of the Cl layer with either Si2H6 or atomic hydrogen. Scattering and recoiling spectroscopy is used to depth profile a N marker layer as Si* is grown using Si2Cl6 and Si2H6 at TS=465 °C. The decrease in the N marker intensity proves that a Si* film is grown, and reflection high-energy electron diffraction (RHEED) patterns show that the Si* is epitaxial. RHEED patterns from Si* grown using alternating exposures of Si2Cl6 and atomic hydrogen are nearly identical to clean Si(100), again indicating epitaxial growth. Both methods suppress formation of three-dimensional islands, which are observed for Si growth from Si2H6 below TS=600 °C.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2963-2965 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A steady-state kinetic model for the chemical vapor deposition (CVD) growth of Si films from SiH4 on Si(100) is presented. The only adsorbing species is SiH4 (absence of homogeneous SiH4 dissociation is presumed). Model predictions of surface hydrogen coverage and Si film growth rate as a function of growth temperature ( T ) are compared with literature values for these quantities. The rate of each reaction step is calculated at selected T. Adsorption of SiH4 and decomposition of SiH3 control the growth rate in the high T limit. In the low T limit, SiH4 adsorption is slowest but is not a simple rate determining step. The SiH4 adsorption rate is controlled by the rate of H2 desorption from two surface SiH species, producing dangling bonds.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 246-252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-of-flight (TOF) direct recoiling (DR) studies of borazine (B3N3H6) decomposition on the Si(100) surface between 100 and 850 °C are reported. The DR method with a grazing incidence angle directly detects the diffusion of light adsorbate elements into sites below the first Si layer, and this migration process is examined here as a function of temperature (T). Submonolayer coverages of coadsorbed B and N atoms (from B3N3H6) occupy subsurface sites after annealing above 550 °C. The B + N results are compared with the well-studied N atom (from NH3) case and limited data for boron from B10H14. The atomic composition of the initial growth surface during thermal chemical vapor deposition (CVD) of boron nitride (BN) from B3N3H6 is surveyed in situ as a function of T using DR in a B3N3H6 flux of 4×1016 molecules cm−2 s−1. Desorption of surface hydrogen plays a central role in controlling both the submonolayer diffusion effects and thermal CVD growth of BN.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 6725-6732 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An investigation of the temperature programmed desorption (TPD) of CO and D2 from Ni(111) has been carried out. It has been shown that a differential method for the extraction of the kinetic parameters, threshold temperature programmed desorption (TTPD), can be applied with accuracy near the limit of zero coverage. In this limit, agreement is found between integral and differential methods for kinetic parameter evaluation. The factors which limit the applicability of TTPD are explored and a method to verify its proper application is presented.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 6792-6802 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The nature of the interaction of hydrogen with Ni(111) is probed by comparing the adsorption and desorption kinetic behavior of H2 and D2. Pure H2 and pure D2 adsorbed on Ni(111) at 140 K exhibit identical desorption behavior. The adsorption rate law depends upon (1-θ) rather than (1-θ)2, suggesting that the rate determining step involves the interaction of an H2 molecule with a single Ni site. The temperature programmed desorption spectra show two desorption features, β1 and β2, which have maxima in desorption rate at 290 and 370 K. When either pure H2 and pure D2 or a mixture of H2 and D2 interact with the Ni(111) surface at 87 K, evidence for kinetic retardation of D2 adsorption is observed. When the H2:D2 mixture is exposed to the Ni(111) surface, held at 87 K, an additional desorption feature, α, is uniquely observed at 100 K for D2. α-D2 desorbs with first order kinetics exhibiting Ed =11.1 kJ/mol and a preexponential factor of 1.2×105 s−1. It may be due to desorption from an intrinsic molecular precursor state. The observed differences between hydrogen and deuterium adsorption indicate the presence of an activation energy barrier for dissociative chemisorption, and a sensitivity of the adsorption process to differences in zero point vibrational energies. A molecular precursor state is proposed to describe the H2+Ni(111) interaction. Dissociative adsorption of hydrogen on intentionally produced surface defects has been shown to destabilize α-D2.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5619-5622 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The abstraction of chemisorbed deuterium (D) on Si(100) by atomic hydrogen (Hat) is studied in real time. The surface H and D coverages are measured by mass analyzing the recoiled H+ and D+ ion signals during the abstraction reaction. We find that Hat efficiently removes adsorbed D on Si(100) with a low activation energy of 0.8±0.6 kcal/mol and a reaction probability that is 0.36 times the Hat adsorption rate on clean Si(100).
    Type of Medium: Electronic Resource
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