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  • 1
    Electronic Resource
    Electronic Resource
    Structural properties of undoped and doped cubic GaN grown on SiC(001) (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4983-4987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy and x-ray diffraction measurements reveal the presence of stacking faults (SFs) in undoped cubic GaN thin layers. We demonstrate the importance of the defects in the interfacial region of the films by showing that the SFs act as nucleation sites for precipitates of residual impurities such as C and Si present in the GaN layers grown on SiC(001) substrates. We used the imaging secondary ion mass spectroscopy technique to locate these impurities. The systematic decrease of the SF density as a function of the layer thickness is explained by an annihilation mechanism. Finally, the effects of usual dopants on the structural properties of GaN layers are discussed. It is shown that Mg has a tendency to incorporate out of the Ga site by forming Mg precipitates for a concentration higher than 1019 cm−3 in contrast with the results found for heavily Si doped layers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456243
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  • 2
    Electronic Resource
    Electronic Resource
    Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4322-4325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics changes in the growth of GaN induced by the presence of In segregated on the surface have been investigated in situ by using reflection high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely, Ga-polar (0001) wurtzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics, leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371364
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of CdTe and MnTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3035-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic deposition techniques are investigated for binary semiconductors of the telluride family, namely CdTe and MnTe. An original method for directly determining the CdTe atomic layer epitaxy (ALE) growth rate—in monolayers/cycle—is proposed, consisting in monitoring the reflection high-energy electron diffraction (RHEED) sublimation intensity oscillations of an ALE grown CdTe layer deposited on a MgTe buffer layer. The ALE CdTe autoregulated growth rate at 0.5 monolayer/cycle (in the substrate temperature domain between 260 and 290 °C) is accounted for on the basis of an atomic model which relies on the alternating c(2×2) Cd and (2×1) Te surface reconstructions during the ALE cycle. RHEED studies on MnTe atomic deposition, together with x-ray diffraction and transmission electron microscopy on ALE grown CdTe/MnTe superlattices reveal that all deposited Mn atoms are incorporated so that no autoregulated growth can be achieved. Furthermore, less than one or just one monolayer of Mn must be sent on the surface per ALE cycle to obtain well controlled superlattices with abrupt interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361243
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  • 4
    Electronic Resource
    Electronic Resource
    Growth, structural, and optical properties of II-VI layers: (001) CdMnTe grown by molecular-beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1069-1081 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of CdMnTe by molecular-beam epitaxy is described, including an in situ calibration of alloy composition by reflection high-energy electron diffraction intensity oscillation, which takes advantage of the larger sticking coefficient of Mn with respect to Cd. Layers are studied by photoluminescence, x-ray diffraction, transmission electron microscopy, and cathodoluminescence imaging. Relaxation of the mismatch strain occurs through different mechanisms, depending on the sign and magnitude of the mismatch. Once identified the characteristic features of the cathodoluminescence images are used to determine the critical thickness of layers of uniform composition or of more elaborate heterostructures. A heuristic criterion for the relaxation of mismatch strain in heterostructures incorporating layers of continuously varying composition is checked. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358967
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  • 5
    Electronic Resource
    Electronic Resource
    CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6257-6265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc-blende MgTe lattice parameter, aMgTe=6.420 ±0.005 A(ring), of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x-ray-diffraction and optical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363714
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  • 6
    Electronic Resource
    Electronic Resource
    Strain mapping of ultrathin epitaxial ZnTe and MnTe layers embedded in CdTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7310-7316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution electron microscopy is used to investigate the morphology of ultrathin pseudomorphic (001) ZnTe and MnTe strained layers grown in CdTe. Local distortions of the crystal lattice are measured directly on high-resolution images by use of image processing software. In the case of ZnTe/CdTe superlattices, the method yields the location of Zn within each place in the heterostructure and the total amount of Zn per period. For MnTe layers embedded in CdTe, one can deduce the atomic morphology of the interfaces which are shown to present a clear asymmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356641
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  • 7
    Electronic Resource
    Electronic Resource
    Critical thickness in epitaxial CdTe/ZnTe (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 292-294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high-energy electron diffraction, low-temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As opposed to similar studies on III-V and Si-Ge systems, there is no evidence of island formation before relaxation by dislocations at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102812
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  • 8
    Electronic Resource
    Electronic Resource
    How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2295-2300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy (MBE) of cubic GaN on SiC films deposited by chemical vapor deposition on Si has been investigated by reflection high-energy electron diffraction, x-ray diffraction, photoluminescence, and micro-Raman spectroscopy. The wurtzite/zinc-blende ratio, indicative of the material quality, has been found to depend on both the initial substrate roughness and the N/metal ratio impinging on the surface. The results were consistently analyzed by assuming that the MBE growth of cubic GaN is mainly governed by the impinging active N flux, which directly determines the mean-free path of Ga adatoms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368296
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  • 9
    Electronic Resource
    Electronic Resource
    Growth kinetics and optical properties of self-organized GaN quantum dots (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7618-7624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized GaN islands of nanometric scale were fabricated by controlling the Stranski–Krastanov growth mode of GaN deposited by molecular beam epitaxy on AlN. Evidence for ripening of dots under vacuum has been observed, resulting in changes in dot size distribution. We also show that in superlattice samples, consisting of multiple layers of GaN islands separated by AlN, the GaN islands are vertically correlated provided that the AlN layer thickness remains small enough. The luminescence peak of GaN dots is blueshifted with respect to bulk emission and its intensity does not vary with temperature, both effects demonstrating the strongly zero-dimensional character of these nanostructures.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367878
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of (111) CdTe on tilted (001) GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 828-830 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Twin-free growth of (111) CdTe on (001) GaAs is reported for substrates tilted around the [11¯0] axis, i.e., exposing Ga dangling bonds at the terrace edges. Layers grown on nominally (001) substrates and tilted substrates are characterized by double crystal x-ray diffraction, low-temperature reflectivity and photoluminescence, channeling, and high-resolution transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100859
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