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  • 1
    Electronic Resource
    Electronic Resource
    Pseudomorphic InGaAs/GaAs/AlGaAs mirrors for optical devices in the near-infrared 0.9–1.3 μm (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 380-383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose using pseudomorphic multilayers of InGaAs, GaAs, and AlGaAs in optical mirrors for near-infrared devices including surface-emitting lasers, bistable optical devices, and optical modulators. We demonstrate the growth of a Fabry–Perot etalon by molecular-beam epitaxy and characterize it optically (reflectance, transmittance, photoluminescence) and structurally (scanning electron microscopy and dislocation imaging). We find the optical characteristics of the etalon as a whole and the individual quarter-wave layers indicate high structural quality for the mirrors. This is in spite of the fact that the lattice constant of the etalon structure is slightly relaxed from that of the GaAs substrate. These results indicate that pseudomorphic mirrors are useful candidates for integrated optical devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342553
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  • 2
    Electronic Resource
    Electronic Resource
    Zinc-implantation-disordered (InGa)As/GaAs strained-layer superlattice diodes (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1131-1134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the properties of (InGa)As/GaAs strained-layer superlattices (SLSs) that have been disordered by implantation of 5×1015/cm2, 250 keV 64Zn+ followed by controlled atmosphere annealing at 680 °C for 30 min. Ion channeling techniques indicate that the Zn-disordered regions of the SLS contain extensive crystalline damage after annealing. Simulations of the disordering process using an analytic ion range code predict that the electrical junction resulting from the implantation process is located outside the disordered region of the SLS in both the vertical and the lateral directions. Junction electroluminescence intensity for given drive current densities from the Zn-disordered SLS devices is comparable to that from reference Be-implantation-doped (SLS retained) devices and greatly exceeds that from heavily dislocated grown-junction mesa diodes in the homogeneous alloy of the average SLS composition; this result is consistent with the results of the simulations. This study demonstrates that implantation disordering can be as useful for strained-layer systems as for less severely mismatched heterojunction systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337356
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  • 3
    Electronic Resource
    Electronic Resource
    Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6500-6505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio-luminescent sources, and low noise blue-green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metal-organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue-green light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348858
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  • 4
    Electronic Resource
    Electronic Resource
    Graded-composition buffer layers using digital AlGaAsSb alloys (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2320-2322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe step-graded digital-alloy buffers using alternate layers of Al0.5Ga0.5As and Al0.5Ga0.5As0.65Sb0.35 grown on GaAs substrates by molecular beam epitaxy. The buffers consist of three sets of superlattices with AlGaAs/AlGaAsSb layer thicknesses of 7.7/2.3 nm, 5.4/4.6 nm, and 3.1/6.9 nm, respectively, terminating in a lattice constant equal to that of bulk In0.32Ga0.68As. Transmission electron micrographs show that most of the misfit-generated dislocations lie near the steps in pseudoalloy composition, and atomic force micrographs indicate a rms surface roughness of 3.6 nm. A 20.5-period lattice-matched InGaAs/InAlAs reflector stack grown on such a buffer has a peak reflectivity of 98% near 1.3 μm. These buffers provide potentially useful substrates for optoelectronic device applications near 1.3 μm using strained InGaAs active regions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114331
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  • 5
    Electronic Resource
    Electronic Resource
    Optical scatter in epitaxial semiconductor multilayers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1360-1362 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of optical scatter in epitaxial semiconductor multilayer structures. The structures comprise quarter-wave layers of Al0.2Ga0.8As/AlAs and GaAs/AlAs grown by molecular beam epitaxy and Al0.2Ga0.8As/AlAs grown by metalorganic chemical vapor deposition to assess differences due to growth technique and layer composition. The bidirectional reflective distribution function (BRDF) is measured at a wavelength of 835 nm corresponding closely to the Bragg reflection condition of the multilayer. The BRDF measurement yields calculated values for the total integrated scatter and effective surface roughness. The former is in the range 7×10−4–5×10−3 while the latter is typically 3–16 A(ring) over the spatial frequency range 3×10 −2–1 μm−1. Both growth techniques yield comparable scatter loss on average, but there are significant differences in microscopic surface morphology, uniformity of scatter across the wafer, and lower limits of scatter. The measurements have significant implications for applications such as surface-emitting laser technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104308
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  • 6
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1242-1244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x-ray diffraction, 4 K photoluminescence, and capacitance-voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×1016 cm−3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high-resistivity material with an effective donor concentration of about 1014 and 1015 cm−3, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102526
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature-dependent damage production in ion-implanted strained-layer superlattices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 517-519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized damage production in both (InGa)As/GaAs and Ga(AsP)/GaP strained-layer superlattices (SLS's) for fluences sufficient to induce compositional disordering at three different implant temperatures. Dramatically different implant temperatures are required to produce similar defect distributions between the two SLS systems. Implants at lower temperatures [80 K for the (InGa)As/GaAs system, 300 K and below for the Ga(AsP)/GaP system] exhibit amorphous zones at depths consistent with the predictions of ion range codes; while implants at elevated temperatures [25 °C in (InGa)As/GaAs, 400 °C in the Ga(AsP)/GaP system] exhibit greatly reduced damage levels characterized mainly by extended defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98384
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  • 8
    Electronic Resource
    Electronic Resource
    Unintentional indium incorporation in GaAs grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2321-2323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have quantified unintentional indium incorporation in GaAs grown by molecular beam epitaxy in a variety of commercial systems. We find that the unintentional indium density in the epitaxial GaAs is more a function of mounting technique and prior machine history than of the manufacturer's design. The indium densities detected in the epitaxial GaAs for substrates that only partially obscure an indium-bearing mount are equal to levels reported to result in minimum defect densities and narrowest photoluminescence linewidths in In-doped GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103881
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  • 9
    Electronic Resource
    Electronic Resource
    Magneto optics of two-dimensional holes in a strained-layer InAs0.15Sb0.85/InSb superlattice (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1015-1017 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cyclotron resonance (CR) of two-dimensional holes is observed in the magneto transmission of circularly polarized far-infrared radiation through two InAs0.15Sb0.85/InSb strained-layer superlattice samples at 4.2 K. Effective masses are (0.034±0.004)me and (0.054±0.006)me at a hole density of 9.4×1010/cm2 per quantum well. This observation is direct evidence that the energy-band line-up of the InAs0.15Sb0.85/InSb strained-layer superlattice is type II. In addition, a spin resonance is observed in the hole CR-inactive polarization from which an effective g factor of 140 is deduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103552
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrical transport and optical studies of the efficiency with which an In0.2Ga0.8As/GaAs strained-layer superlattice (SLS) can filter threading dislocations generated in a thick In0.1 Ga0.9 As layer grown on GaAs. The electrical studies, the first of their kind, rely on a novel test structure which allows electrical characterization of just the top portion of the SLS, with the bottom portion acting as the dislocation filter. For optical characterization we detect dislocations directly by photoluminescence microscopy. The electrical results show that ∼3–6 periods of filtering are needed to attain high mobilities. The photoluminescence microimages show a small density of dislocations near the top of an eight-period SLS but no dislocations for 11 or more periods. Filtering with In0.2Ga0.8As/GaAs SLS's is more effective than with GaAs0.8P0.2/GaAs SLS's, possibly because of larger interlayer differences in strain and elastic constants for the former.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100032
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