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  • 1
    Online Resource
    Online Resource
    San Diego :Elsevier Science & Technology,
    Keywords: Backscattering. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (401 pages)
    Edition: 1st ed.
    ISBN: 9780323152051
    Language: English
    Note: Front Cover -- Backscattering Spectrometry -- Copyright Page -- Table of Contents -- Dedication -- Preface -- Acknowledgments -- Chapter 1. Introduction -- 1.1 Introduction -- 1.2 Concept of a Backscattering Experiment and Its Layout -- 1.3 Basic Physical Processes -- 1.4 Examples and Applications -- 1.5 Strengths and Weaknesses of Backscattering Spectrometry -- 1.6 How to Read a Backscattering Spectrum -- 1.7 Book Outline -- References -- Chapter 2. Basic Physical Concepts -- 2.1 Introduction -- 2.2 Kinematic Factor K -- 2.3 Scattering Cross Section σ -- 2.4 Energy Loss and Stopping Cross Section -- 2.5 Linear Additivity of Stopping Cross Sections (Bragg's Rule) -- 2.6 Energy Straggling -- 2.7 Linear Additivity of Energy Straggling -- References -- Chapter 3. Concepts of Backscattering Spectrometry -- 3.1 Introduction -- 3.2 Depth Scale for an Elemental Sample -- 3.3 Energy E before Scattering -- 3.4 Numerical Methods to Find the Energy E before Scattering -- 3.5 Height of an Energy Spectrum for an Elemental Sample -- 3.6 Depth Scale for a Homogeneous Solid Containing More Than One Element (Compound Sample) -- 3.7 Height of an Energy Spectrum for a Homogeneous Solid Containing More Than One Element (Compound Sample) -- 3.8 High-Energy Edge of an Energy Spectrum for an Elemental Sample with Several Isotopes -- 3.9 Energy Loss and Yield Respond to Atoms per Unit Area -- 3.10 Numerical Methods to Compute Backscattering Spectra -- References -- Chapter 4. Backscattering Spectrometry of Thin Films -- 4.1 Introduction -- 4.2 Energy Spectrum of a Thin Elemental Film -- 4.3 Energy Spectrum of Multilayered Elemental Films -- 4.4 Energy Spectrum of a Homogeneous Thin Film Containing More Than One Element (Compound Film) -- 4.5 Energy Spectrum of Multilayered Films Containing More Than One Element (Layered Compound Films). , 4.6 Influence of Energy Straggling and System Resolution -- References -- Chapter 5. Examples of Backscattering Analysis -- 5.1 Introduction -- 5.2 Surface Impurity on an Elemental Bulk Target -- 5.3 Elemental Samples Containing Uniform Concentrations of Impurities -- 5.4 Composition of Homogeneous Samples Containing More Than One Element -- 5.5 Impurities Distributed in Depth in an Elemental Sample -- 5.6 Thickness of Thin Films -- References -- Chapter 6. Instrumentation and Experimental Techniques -- 6.1 Introduction -- 6.2 Accelerator -- 6.3 Energy Stabilization System -- 6.4 Energy Calibration -- 6.5 The Vacuum System -- 6.6 Beam Definition and Measurement -- 6.7 Backscattering Beam Energy Analysis -- 6.8 Sample Holders -- References -- Chapter 7. Influence of Beam Parameters -- 7.1 Introduction -- 7.2 Mass Resolution -- 7.3 Accessible Depth -- 7.4 Depth Resolution at Normal Incidence -- 7.5 Depth Resolution at Glancing Incidence -- 7.6 Sensitivity to Detection of Surface Impurities -- 7.7 Low-Energy Tails -- 7.8 Non-Rutherford Scattering, Nuclear Reactions, and Detection of Low-Mass Impurities -- 7.9 Microscopic Beam and Nonuniform Layers -- References -- Chapter 8. Use of Channeling Techniques -- 8.1 Introduction -- 8.2 Crystal Alignment Procedures -- 8.3 Perfect Crystal -- 8.4 Lattice Disorder Amorphous Layers and Polycrystalline Films -- 8.5 Flux Peaking and Lattice Site Location of Impurities -- 8.6 Influence of the Analysis Film -- References -- Chapter 9. Energy-Loss Measurements -- 9.1 Introduction -- 9.2 Extraction of ε Values from [ε] Measurements -- 9.3 Measurement of [ε] from Thin-Film Data -- 9.4 Determination of [ε] from Signal Height -- References -- Chapter 10. Bibliography on Applications of Backscattering Spectrometry -- 10.1 Introduction -- 10.2 Surfaces -- 10.3 Bulk Properties -- 10.4 Oxide and Nitride Layers. , 10.5 Deposited and Grown Layers -- 10.6 Thin-Film Reactions -- 10.7 Ion Implantation in Metals -- 10.8 Ion Implantation in Semiconductors -- 10.9 Hydrogen and Helium in Metals -- 10.10 Sputtering and Blistering Processes -- 10.11 Microbeams and Other Applications -- Appendix A: Transformation of the Rutherford Formula from Center of Mass to Laboratory Frame of Reference -- Appendix B: Influence of Energy Straggling on a Thin-Film Spectrum -- Appendix C: The True Position of the Edges of a Narrow Rectangular Signal -- Appendix D: List of Energy-Loss Complications -- Appendix E: Rough Targets -- Appendix F: Numerical Tables -- Indexes.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3961-3963 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When a cylindrical permanent magnet is levitated with a superconductor under certain conditions, it will rotate spontaneously and persist for an indefinite period of time. The results of this study elucidating the nature of this behavior are presented.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3029-3031 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films (∼0.43 and ∼0.95 μm thick) of YBa2Cu3O7−δ on (100) LaAlO3 substrates have been implanted with 800 keV Ag+ to a dose of 5×1014/cm2, at room temperature (i.e., the total range (approximate)0.4 μm and the damage level (approximate)3.1 displacements per atom) and at elevated temperatures (450, 650, and 780 °C), followed by an in situ annealing schedule in flowing oxygen ambient. We have found that the implantation at room temperature amorphizes the implanted layer. In such a case, the implanted layer cannot regrow to the superconducting phase if there is no crystal seed remaining in the bottom of the film, whereas implantation at elevated temperatures plus an in situ annealing schedule, including a step at 870 °C in flowing oxygen ambient, can maintain the crystal structure and superconductivity of the films. For the thicker film, we have found that after the implantation at 450 or 650 °C and the in situ annealing, the total volume of the film has recovered to the superconducting 123 phase with a Tc=89 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 123-125 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The near surface regions of the single crystals of LaAlO3 and NdGaO3 are disordered to a depth of 150 nm by oxygen ion implantation. Thermally induced solid state epitaxial regrowth kinetics of these damaged layers are studied using ion channeling. It is seen that the regrowth in LaAlO3 samples starts at a temperature of 450 °C for 1 h in oxygen atmosphere. Most of the disordered region recovers as the annealing temperature is increased to 600 °C. Some end of range damage remains even after annealing at 1100 °C for 1 h. In the case of NdGaO3, the epitaxial regrowth starts at 650 °C. As the annealing temperature is increased to 900 °C, practically all the damaged region recovers. The Arrhenius plots indicate a distinct epitaxial-regrowth regime with different activation energies for the two cases. The implication of these results on the technology of high temperature superconducting circuit fabrication is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1075-1077 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A boron nitride(lubricant)/boron carbide composite (approximately 70% boron nitride) has been formed in approximately the first 750 A(ring) of surface and near-surface regions of a polycrystalline boron carbide sample by implanting nitrogen (N) ions at 100 keV with a total dose of 4×1017 N ions/cm2 followed by xenon chloride laser annealing. The composition and the profile of the boron, carbon, and nitrogen in the sample at various stages were determined by Rutherford backscattering spectrometry. During laser annealing, the deeply implanted N atoms diffused back toward the heated surface with about 50% of them remaining in the near-surface region. Argon sputtering and x-ray photoelectron spectroscopy measurements confirmed the formation and distribution of boron nitride.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2321-2323 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By judiciously placing vacancy and interstitial defects at different depths, we are able to enhance or retard boron diffusion. This opens up a new approach for the formation of shallow P+n junction in silicon. After preimplantation with 50 or 500 keV Si+ ions to produce a surface vacancy-rich region, we studied the diffusion of deposited B on predamaged samples with annealing between 900 and 1010 °C. Boron diffusion retardation was observed in both implantation conditions after low temperature annealing with enhancement occurring in a 50 keV implanted sample at high temperature. Choosing high energy implantation to separate vacancies and interstitials can reduce the boron diffusion significantly. Such suppression became more obvious with higher implant doses. A junction less than 10 nm deep (at 1×1017 cm−3 according to carrier concentration profiles) can be formed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1573-7357
    Keywords: 74.50.+r ; 74.72.Bk ; 74.76.Bz ; 85.25.Cp
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Measurements of the field-modulated critical currents of cuprate thin film microbridges on tricrystal substrates are reported. Two central peaks of equal height are observed in the field-dependent critical currents of YBCO tricrystal microbridges. However, the critical current is nonvanishing at zero field for YBCO, consistent with an orthorhombically distorted d-wave order parameter. An ion-irradiated YBCO tricrystal microbridge has also been measured, and has been found to exhibit more ideal dx2−y2-like behavior with increasing irradiation dosage.
    Type of Medium: Electronic Resource
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