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  • 1
    Electronic Resource
    Electronic Resource
    Digital scanning probe microscope controller for molecular manipulation applications (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1698-1701 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile digital controller for scanning probe microscopy capable of data acquisition during molecular manipulation has been constructed. A commercially available digital signal processor (DSP) board connected to a Pentium PC and custom-built high voltage amplifiers were used to control a commercial ultrahigh vacuum scanning tunneling microscope and to perform molecular manipulations. Use of the DSP system to produce all analog outputs resulted in an extremely flexible system with complete control of the probe tip. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150522
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  • 2
    Electronic Resource
    Electronic Resource
    Numerical study of nonequilibrium electron transport in AlGaAs/GaAs heterojunction bipolar transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 250-252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have simulated numerically the dynamics of nonequilibrium electron transport in n-p-n AlGaAs/GaAs heterojunction bipolar transistors. We show that collector transit time is intimately related to base transport dynamics and high p-type carrier concentration in a thin base improves device performance. However, even for a very thin collector depletion region, the small Γ-X intervalley energy separation in GaAs places severe constraints on efficient collector transport.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101921
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  • 3
    Electronic Resource
    Electronic Resource
    Hot-electron transport in GaAs in the presence of a magnetic field (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1425-1427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the results of the incorporation of magnetic field effects into the Monte Carlo simulation of hot electrons traversing narrow regions of heavily doped GaAs. In addition to accounting for the experimentally observed suppression of the ballistic contribution to the hot-electron spectrum, a further analysis allows us to infer the spread in transverse energy of the injected hot electrons.We attribute this loss of collimation to scattering by unscreened ionized impurities in the depletion region which is set up when a hot-electron injector is forward biased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98645
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  • 4
    Electronic Resource
    Electronic Resource
    High-frequency study of nonequilibrium transport in heterostructure bipolar transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1789-1791 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of studying nonequilibrium transport in heterostructure bipolar transistors at a millimeter-wave band. Increasing the total potential drop in the collector from 0.88 to 1.6 eV changes the measured intrinsic transit delay from 0.32 to 0.63 ps due to the increasing importance of intervalley scattering. Both the experimental and calculated data illustrate the role nonequilibrium transport and intervalley scattering have in determining the fundamental limits to device performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102174
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  • 5
    Electronic Resource
    Electronic Resource
    Physics and design of hot-electron spectrometers and transistors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3076-3079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explain how Monte-Carlo simulations may be used to calculate the transfer characteristics of GaAs hot-electron transistors, from which hot-electron spectra may be derived. We present such spectra for a range of doping densities and injection energies for a base width of 500 A(ring). We compare our results with those derived from other theories and suggest an experiment which should indicate their relative validity. Optimum parameters for base width and doping for high-frequency hot-electron transistors are derived and compared with available experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342702
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  • 6
    Electronic Resource
    Electronic Resource
    Hot-electron transport in In0.53Ga0.47As (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1842-1849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte Carlo routine has been used to simulate hot-electron transport across narrow regions of heavily doped In0.53Ga0.47As. The doping level/widths considered correspond to those proposed for the base of hot-electron transistors. For doping levels of order 1018 cm−3, the injected hot electrons suffer inelastic scattering by the coupled plasmon-optic phonon mode. The performance of hot-electron transistors is characterized by the base transfer factor which relates a change in collector current with a change in emitter current. The base transfer factor is determined from the simulations for a range of base widths and operating conditions. Results for InGaAs are compared with those for GaAs. Under comparable operating conditions, the InGaAs hot-electron transistor offers a higher transport efficiency and hence, higher current gain compared with that of GaAs. We have used the Monte Carlo routine to simulate the performance of experimental results from InGaAs hot-electron transistors. The simulations are in good agreement with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339567
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  • 7
    Electronic Resource
    Electronic Resource
    Edge effects in a gated submicron resonant tunneling diode (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2508-2510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the current-voltage [I(V)] characteristics of a gated GaAs/(AlGa)As resonant tunneling diode. As the negative gate voltage is progressively increased I(V) becomes asymmetric. In particular the peak-to-valley ratio in forward bias is decreased from (approximately-equal-to)20 to (approximately-equal-to)1, but in reverse bias remains constant (approximately-equal-to)20. This arises from a lateral variation of the voltage drop across the emitter tunnel barrier, which in forward bias leads to a smearing of the resonance. We discuss the relationship between our experiment and the low peak-to-valley ratios of two-terminal submicron resonant tunneling diodes observed by other groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106949
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic scale modifications of GaAs using a scanning tunneling microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1515-1517 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have created atomic scale modifications on the GaAs(111)B surface by applying voltage pulses between the tip of a scanning tunneling microscope and a GaAs sample under ultrahigh vacuum conditions. A voltage pulse of 5 V (sample negative) for 25 ms results in the creation of a disordered region (approximately, 3 nm×3 nm in area) of As trimers. In addition, surface stacking faults are formed which extend over distances of order 10 nm and terminate on surface defects. A pulse with the same parameters, but opposite polarity, creates a nanometer scale crater. We argue that the smallest features are formed by electric field induced diffusion (for negative bias pulses) or field desorption (positive bias pulses). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113631
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  • 9
    Electronic Resource
    Electronic Resource
    Submicrometer resonant tunnelling diodes fabricated by photolithography and selective wet etching (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1124-1126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new process based on photolithography and selective wet etching has been used to fabricate small area resonant tunnelling diodes. The low-temperature current-voltage (I-V) characteristics of diodes with conducting widths less than 0.1 μm show additional peaks due to 1D lateral quantum confinement. We observe a pronounced asymmetry in I-V which we explain in terms of tunnelling from emitter states which have a different degree of lateral quantum confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112117
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  • 10
    Electronic Resource
    Electronic Resource
    High efficiency submicron light-emitting resonant tunneling diodes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3332-3334 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated GaAs/AlAs p-i-n double-barrier resonant tunneling diodes with lateral dimensions down to 0.5 μm. There are significant differences in the electroluminescence spectra of these diodes as compared with large area diodes fabricated from the same heterostructure. In particular, a red shift of the quantum well emission line is observed together with an additional spectral line which is attributed to spatially indirect recombination. Furthermore, there is a strong increase in the low-temperature electroluminescence efficiency for the smallest devices. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112383
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