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  • 1
    Electronic Resource
    Electronic Resource
    Coupled LO–plasmon modes in semi-insulating GaAs of ZnSe/GaAs heterojunctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1128-1135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy is used to investigate strong band bending at the interface in semi-insulating substrates of ZnSe/GaAs heterostructures grown at high epitaxy rates. Direct evidence is given of the enhancement of polar modes strength, on the substrate side, by the electric field of the space-charge zone associated with Fermi-level pinning. The latter is qualitatively analyzed by following band flattening under illumination through the evolution of interfacial coupled LO-phonon–plasmon modes. Corresponding Raman line shapes are discussed within the phenomenological approach of D. H. Hon and W. L. Faust [Appl. Phys. 1, 241 (1973)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362850
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  • 2
    Electronic Resource
    Electronic Resource
    Raman study of band bending at ZnSe/GaAs interfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1241-1248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Apparent p-type conductivity in nonintentionally doped ZnSe layers, grown at high temperature on semi-insulating GaAs substrates, is investigated by Raman spectroscopy. The microprobe technique provides direct evidence for carrier location on the GaAs side of the structures, close to the interface. Line-shape analysis of the coupled LO phonon-plasmon mode for different exciting wavelengths can be achieved, within the model of Hon and Faust [Appl. Phys. 1, 241 (1973)], only when incorporating plasma inhomogeneity. Electronic band bending at the junction in GaAs is deduced from the inferred carrier-density profile. Changes in Raman spectra under strong illumination are shown to proceed from the flattening of the bands through selective carrier photoinjection. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358925
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  • 3
    Electronic Resource
    Electronic Resource
    Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1990-1992 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth mechanisms of GaN grown on a GaN buffer deposited onto sapphire substrates are studied here. The growth rate was measured at different temperatures versus ammonia flow and was found to decrease with increasing NH3 flow. This surprising behavior is modeled in terms of competitive adsorption of species on the growing surface. Very good agreement is obtained between the model and the experimental data. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119764
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  • 4
    Electronic Resource
    Electronic Resource
    Effective masses in Sn-doped Ga1−xAlxAs (x〈0.33) determined by the Shubnikov–de Haas effect (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3481-3484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first direct effective mass measurements of electrons in metalorganic vapor phase epitaxy (MOVPE) Sn-doped Ga1−xAlxAs (x〈0.33) epilayers from Shubnikov–de Haas (SdH) oscillations are reported. The m@B|eΓ values of the conduction band were obtained up to x=0.3. These data, corrected for nonparabolicity, were compared to values calculated by the k ⋅ p model, taking into account the disorder bowing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335771
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  • 5
    Electronic Resource
    Electronic Resource
    An optical study of interdiffusion in ZnSe/ZnCdSe (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1579-1581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents a study of intermixing in ZnSe/ZnCdSe quantum well structures, using repetitive thermal annealing with photoluminescence measurements. An improvement in the optical quality of the samples was found for anneals at temperatures (∼500 °C) for which macroscopic intermixing is not observed. The interdiffusion process of this system was found to be Fickian with no dependence on alloy composition or strain. An activation energy of 2.3±0.2 eV was obtained for the interdiffusion process over a 250 K temperature range and four decades of interdiffusion coefficient. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117036
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  • 6
    Electronic Resource
    Electronic Resource
    Exciton recombination mechanism and binding energies in MOCVD-grown Zn1−x Cd x Se−ZnSe single quantum wells (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1585-1593 
    Details
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report here on the study of the optical properties of ZnCdSe−ZnSe quantum structures elaborated by metalorganic chemical vapour deposition (MOCVD). The band structure is experimentally investigated by means of photoluminescence and photoreflectance. We have computed the exciton binding energies for heavy- and light-hole excitons in the context of a self-consistent two-parameter trial function. As a complement, we study the temperature dependence of the photoluminescence intensity under both direct and indirect photoexcitation in graded-index separate confinement heterostructures based on these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457248
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