In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 12R ( 1999-12-01), p. 6801-
Abstract:
This study examines the effects of bottom electrodes for metal ferroelectric metal (MFM) capacitor applications. We investigated the following parameters of bottom electrodes and Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) thin films: substrate temperature, rf power, gas flow rate, Ar/O 2 ratio, electrode material, and post-annealing effect. Bottom electrodes grown at 300°C for Pt and 200°C for RuO 2 exhibited a film resistivity of 10 -4 Ω·cm, had a surface roughness of approximately 55 Å and a preferred crystal orientation. Rapid thermal annealing (RTA) treatments on a Pt electrode at 600°C for 30 s improved the resistivity to 5×10 -6 Ω·cm and generated the (111) preferred crystal orientation. PZT films exhibited a strong PZT (101) peak for an optimized Pt bottom electrode and (111), (200), (112) planes without preferred PZT orientations for the RuO 2 electrode. A well-fabricated Pd/PZT/Pt capacitor showed a leakage current density in the order of 6×10 -5 A/cm 2 , a dielectric constant ( ε r ) of 365, a remanent polarization ( P r ) of 27 µC/cm 2 , and a coercive field ( E c ) of 50.5 kV/cm. This paper discusses the bottom electrode properties as well as their recommended conditions in memory device applications of thin-film PZT capacitors.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.6801
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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