In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 336 ( 1994)
Abstract:
We have investigated the stability of the hydogenated amorphous silicon thin film transistors (a-Si:H TFTs) employing silicon dioxide (SiO 2 ) with N 2 plasma treatment as a gate dielectric, where SiO 2 was deposited by atmospheric pressure chemical vapor deposition (APCVD). Their stability was compared with those of a-Si:H TFTs whose gate dielectric was silicon nitride (SiN x ) deposited by plasma enhanced chemical vapor deposition (PECVD). Two kinds of stresses, gate bias and light illumination, were applied. The threshold voltage shin (AVu,) and the inverse subthreshold slope shift (ΔV th ) were measured as a function of the bias voltage and the light stress time. For the positive bias stress, the ΔV th , of the a-Si:H TFTs with the N 2 plasma treated SiO 2 dielectric is smaller than that with the PECVD SiN x gate dielectric. For the negative bias stress and light stress, however, the ΔV th of TFT with N 2 plasma treated SiO 2 dielectric is larger than that with the SiN x dielectric
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-336-799
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1994
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