In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 5R ( 1998-05-01), p. 2634-
Abstract:
In this study, we thoroughly investigated the reactive ion etching
mechanism of RuO 2 film in oxygen plasma with the addition of CF 4 ,
Cl 2 , and N 2 . The etch rate of RuO 2 was examined as functions of flow
rates of input gases, substrate temperature, DC bias applied to the substrate, and pressure. The concentrations of the etching species in
the plasma were determined using optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch products were
determined with a QMS and the etched surface of RuO 2 film was
examined with X-ray photoelectron spectroscopy (XPS). RuO 4 and
RuO 3 , which are formed by the reactions between RuO 2 film and
oxygen radicals, are the only etch products regardless of the kind of additive gas. The additive gases (CF 4 , Cl 2 , and N 2 ) are not directly
involved in the chemical reaction with the RuO 2 film, but they increase
the concentration of oxygen radicals and accordingly, appreciably increase the etch rate of the RuO 2 films. The etch rate is limited by
the formation rate of the etch products, which is enhanced by the bombardment of energetic ions. Therefore, the etch rate depends not
only on the concentration of oxygen radicals, but also on the flux and energy of the ions bombarding the film surface. In this study, for the
first time, we introduced the use of the O 2 /N 2 plasma system in RuO 2 etching.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.2634
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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