In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 18, No. 2 ( 2003-02), p. 257-261
Abstract:
High-quality Hg 1− x Cd x Te epilayers on CdTe buffer layers were grown by molecular beam epitaxy using various growth methods. The reflection high-energy electron diffraction, scanning electron microscopy, and atomic force microscopy measurements showed that the crystallinity and electrical properties of the Hg 1− x Cd x Te epilayers grown on CdTe buffer layers deposited by using a two-step annealing growth method were improved. These results indicate that high-quality Hg 1− x Cd x Te films can be obtained by using CdTe buffer layers grown by the two-step annealing growth method and that the grown Hg 1− x Cd x Te epilayers hold promise for potential applications in optoelectronic devices in the area of infrared detectors.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.2003.0036
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2003
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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