In:
Journal of Applied Physics, AIP Publishing, Vol. 102, No. 7 ( 2007-10-01)
Abstract:
We have developed an organic thin-film transistor (TFT) technology that aims at providing a good balance of static and dynamic performance parameters. An inverted staggered (bottom-gate, top-contact) device structure with patterned metal gates, a room-temperature-deposited gate dielectric providing a capacitance of 0.7μF∕cm2, and vacuum-deposited pentacene as the semiconductor were employed. The TFTs have a channel length of 10μm, a carrier mobility of 0.4cm2∕Vs, an on/off current ratio of 107, a subthreshold swing of 100mV/decade, and a transconductance per channel width of 40μS∕mm. Ring oscillators operate with supply voltages as low as 2V and with signal propagation delays as low as 200μs per stage.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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