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  • 1
    Online Resource
    Online Resource
    Novel hexameric tin carboxylate clusters as efficient negative-tone EUV photoresists: high resolution with well-defined patterns under low energy doses
    Royal Society of Chemistry (RSC) ; 2023
    In:  Nanoscale Advances Vol. 5, No. 11 ( 2023), p. 3033-3043
    Details
    In: Nanoscale Advances, Royal Society of Chemistry (RSC), Vol. 5, No. 11 ( 2023), p. 3033-3043
    Abstract: Synthesis of two novel tin carboxylate clusters (RSn) 6 (R′CO 2 ) 8 O 4 Cl 2 is described, and their structures have been characterized by X-ray diffraction. These clusters have irregular ladder geometry to form very smooth films with small surface roughness (RMS 〈 0.7 nm) over a large domain. EUV lithography can be used to resolve half pitches (HPs) in the order of 15–16 nm with line width roughness (LWR = 4.5–6.0 nm) using small doses (20–90 mJ cm −2 ). Cluster 1 (R = n -butyl; R′CO 2 = 2-methyl-3-butenoate) contains only a radical precursor and cluster 2 (R = vinyl, R′CO 2 = 2-methylbutyrate) bears both a radical precursor and an acceptor; the latter is much better than the former in EUV and e-beam photosensitivity. For these clusters, the mechanisms of EUV irradiation have been elucidated with high resolution X-ray photoelectron spectroscopy (HRXPS) and reflective Fourier-transform infrared spectroscopy (FTIR). At low EUV doses, two clusters undergo a Sn–Cl bond cleavage together with a typical decarboxylation to generate carbon radicals. The n -butyl groups of cluster 1 are prone to cleavage whereas the vinyl–Sn bonds of species 2 are inert toward EUV irradiation; participation of radical polymerization is evident for the latter.
    Type of Medium: Online Resource
    ISSN: 2516-0230
    URL: Article
    DOI: 10.1039/D3NA00131H
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2023
    detail.hit.zdb_id: 2942874-9
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  • 2
    Online Resource
    Online Resource
    Partial decarboxylation of hafnium oxide clusters for high resolution lithographic applications
    Royal Society of Chemistry (RSC) ; 2022
    In:  Journal of Materials Chemistry C Vol. 10, No. 41 ( 2022), p. 15647-15655
    Details
    In: Journal of Materials Chemistry C, Royal Society of Chemistry (RSC), Vol. 10, No. 41 ( 2022), p. 15647-15655
    Abstract: This work shows a great influence on the EUV performance of hafnium carboxylate clusters via slight structural modification. Treatment of hexameric hafnium clusters Hf 6 O 4 (OH) 4 (RCO 2 ) 12 (R = i-alkyl) with LiOH in DCM/water (25 °C, 20 min) afforded hafnium clusters formulated as Hf 6 O 4 (OH) 6 (RCO 2 ) 10 according to elemental analysis, NMR data, ESI-Mass and TGA studies. Two representatives 1-OH and 2-OH have been examined via surface characterization, e-beam and EUV lithographic studies. The two photoresists can form smooth and defect-free thin films over a large domain with the surface RMS roughness being smaller than 1.0 nm. For e-beam, patterns are only resolved into 31 nm half-pitch (HP) due to the large shrinkage in the photoresist thickness. With an EUV interference mask, the patterns have been resolved into a 17 nm HP with small line-width roughness (LWR) at similar dose energies. The XPS studies of the EUV exposed film of sample 1-OH revealed a decomposition of five carboxylate ligands even at high energy doses.
    Type of Medium: Online Resource
    ISSN: 2050-7526 , 2050-7534
    URL: Article
    DOI: 10.1039/D2TC02912J
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2022
    detail.hit.zdb_id: 2702245-6
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