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  • 11
    Electronic Resource
    Electronic Resource
    Force measurement in a nanomachining instrument (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4325-4329 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Two miniature, high sensitivity force transducers were employed to measure the thrust force along the in-feed direction and the cutting force along the cross-feed direction in a nanomachining instrument. The instrument was developed for conducting fundamental experiments of nanocutting especially on brittle materials. The force transducers of piezoelectric quartz type can measure machining forces ranging from 0.2 mN to 10 N. The submillinewton resolution makes it possible to measure the machining forces in the cutting experiments with depths of cut as small as the nanometer level. The stiffness and resonant frequency of the force transducers are 400 mN/nm and 300 kHz, respectively, which meet the specification of the instrument. A force transducer assembly is designed to provide a mechanism to adjust the preload on the force transducer and to decouple the measurement of forces. The assembly consists of three dual-axis circular flexures and a subframe. The axial stiffness of the flexures is designed to be greater than 6×107 N/m and the lateral stiffness of the flexures is designed to be 1×106 N/m to provide proper decoupling of forces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319976
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  • 12
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7094-7103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality In0.53Ga0.47As epilayers have been grown on semi-insulating (100) Fe-doped InP substrates. The growths were performed by liquid phase epitaxy (LPE) using rare-earth-doped melts in a graphite boat. The rare-earth elements studied were Yb, Gd and Er which act as gettering agents of impurities. Hall measurements show an elevated electron mobility for rare-earth-treated samples over undoped samples, μe=11 470 cm2/V s at 300 K and reduced carrier concentration (n-type), 9.33×1013 cm−3. The Hall results indicate an improvement in layer quality, but suggests that the treated layers are compensated. Photoluminescence (PL) studies show that the layers grown from rare-earth-doped melts have higher integrated PL efficiency with narrower PL linewidths than the undoped melt growths. The grown materials were fully characterized by Fourier transform infrared spectroscopy, double-crystal x-ray diffraction, energy dispersive spectroscopy, secondary-ion-mass spectroscopy, and deep level transient spectroscopy (DLTS). Compositional measurements reveal no measurable incorporation of rare-earth elements into the grown epilayers. DLTS measurements indicate the creation of two deep levels with rare-earth treatment, which is attributed to either the rare earth elements or impurities from within the rare-earth elements. Subsequent glow discharge mass spectrometry measurements reveal many impurities within the rare-earth elements which preferentially might lead to p-type doping centers and/or deep levels. Thus, rare-earth doping of LPE melts clearly improves epitaxial layer quality, however, the purity of commercially available rare-earth elements hinders optimal results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363721
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  • 13
    Electronic Resource
    Electronic Resource
    In0.53Ga0.47As metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1930-1932 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112820
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  • 14
    Electronic Resource
    Electronic Resource
    Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3471-3473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height was measured for five different materials on undoped In0.52Al0.48As grown by molecular beam epitaxy (MBE). Of the materials tested, two were transparent conductors, indium-tin-oxide (ITO), and cadmium tin oxide (CTO) and for comparison, three were opaque metals (Au, Ti, and Pt). The barrier heights were measured using I–V measurements. Due to the high series resistance created by the undoped In0.52Al0.48As, the Norde method [J. Appl. Phys. 50, 5052 (1979)] was used to plot the I–V characteristics and extract the Schottky barrier height. The Schottky barrier heights were determined to be 0.639, 0.637, 0.688, 0.640, and 0.623 eV for ITO, CTO, Au, Ti, and Pt, respectively. Previously published results for Schottky barriers on In0.52Al0.48As are compared with our measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113767
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  • 15
    Electronic Resource
    Electronic Resource
    Solid-State NMR Studies of Self-Assembled Monolayers (1995)
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 1860-1863 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00006a007
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  • 16
    Electronic Resource
    Electronic Resource
    Differential Damage to Auditory Neurons and Hair Cells by Ototoxins and Neuroprotection by Specific Neurotrophins in Rat Cochlear Organotypic Cultures (1996)
    Oxford, UK : Blackwell Publishing Ltd
    European journal of neuroscience 8 (1996), S. 0 
    Details
    ISSN: 1460-9568
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Therapeutic ototoxic drugs are one of the major causes of damage in the peripheral auditory system, leading to hearing loss. In this study, we have examined the toxic actions of three classes of ototoxins (sodium salicylate, gentamicin and cisplatin) in organotypic cultures of postnatal cochlear explants. In these cultures, afferent innervation of hair cells by primary auditory neurons remained intact. Double labelling with a monoclonal antibody against neurofilament protein and a phalloidin-fluorescein isothiocyanate conjugate revealed that the three types of drugs induced differential damage to auditory neurons and hair cells in the cochlea. While gentamicin preferentially caused hair cell death, sodium salicylate specifically induced degeneration of auditory neurons. In contrast, cisplatin resulted in destruction of both auditory neurons and hair cells. Neuronal degeneration was largely prevented by the addition of neurotrophin-4/5, brain-derived neurotrophic factor and neurotrophin-3 to the culture media together with the ototoxins, while nerve growth factor and other growth factors had no effect. In contrast, the hair cell loss caused by cisplatin or gentamicin was not attenuated by the presence of neurotrophins. These results suggest that ototoxic mechanisms of salicylates, aminoglycosides and chemotherapeutic agents are different. Auditory neuronal loss induced by ototoxins may be prevented by specific neurotrophins.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-9568.1996.tb01333.x
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  • 17
    Electronic Resource
    Electronic Resource
    Physiological causes of cotton fruit abscission under conditions of high temperature and enhanced ultraviolet-B radiation (2005)
    Oxford, UK; Malden, USA : Munksgaard International Publishers
    Physiologia plantarum 124 (2005), S. 0 
    Details
    ISSN: 1399-3054
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: An experiment was conducted in sunlit controlled environment growth chambers to determine the physiological mechanisms of fruit abscission of cotton (Gossypium hirsutum L. cv. NuCOTN 33B) grown in high temperature and enhanced ultraviolet (UV)-B radiation. Six treatments included two levels of optimum (30/22°C) and high (36/28°C) day/night temperatures and three levels of biologically effective UV-B radiation (0, 7, and 14 kJ m−2 per day). Both the temperature and UV-B treatments were imposed from seedling emergence through 79 days after emergence (DAE). High temperature did not negatively affect either leaf net photosynthetic rates (Pn) or abscission of cotton squares (floral buds with bracts) but significantly decreased boll retention. Plants exposed to 7 kJ UV-B radiation retained 56% less bolls than the 0 kJ UV-B control plants at 79 DAE, despite no significant differences in leaf Pn measured at squaring and flowering. At 53 DAE, leaf Pn of plants grown in high UV-B radiation (14 kJ m−2 per day) decreased by 11%, whereas total non-structural carbohydrate (TNC) concentrations in the leaves, floral buds, and young bolls decreased by 34, 32, and 20%, respectively, compared with the control plants. The high UV-B radiation significantly increased square abscission. Square abscission was not related to leaf TNC concentration but closely correlated with TNC in floral buds (r = −0.68, P 〈 0.001). Young boll abscission was highly correlated with TNC concentrations in both the leaves (r = −0.40, P 〈 0.01) and the bolls (r = −0.80, P 〈 0.001). Our results indicate that non-structural carbohydrate limitation in reproductive parts was a major factor associated with fruit abscission of cotton grown under high temperature and enhanced UV-B radiation conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1399-3054.2005.00491.x
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  • 18
    Electronic Resource
    Electronic Resource
    Senescence and hyperspectral reflectance of cotton leaves exposed to ultraviolet-B radiation and carbon dioxide (2004)
    Oxford, UK; Malden, USA : Munksgaard International Publishers
    Physiologia plantarum 121 (2004), S. 0 
    Details
    ISSN: 1399-3054
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: The objectives of this study were to determine the effects of UV-B radiation and atmospheric carbon dioxide concentrations ([CO2]) on leaf senescence of cotton by measuring leaf photosynthesis and chlorophyll content and to identify changes in leaf hyperspectral reflectance occurring due to senescence and UV-B radiation. Plants were grown in controlled-environment growth chambers at two [CO2] (360 and 720 µmol mol−1) and three levels of UV-B radiation (0, 7.7 and 15.1 kJ m−2 day−1). Photosynthesis, chlorophyll, carotenoids and phenolic compounds along with leaf hyperspectral reflectance were measured on three leaves aged 12, 21 and 30 days in each of the treatments. No interaction was detected between [CO2] and UV-B for any of the measured parameters. Significant interactions were observed between UV-B and leaf age for photosynthesis and stomatal conductance. Elevated [CO2] enhanced leaf photosynthesis by 32%. On exposure to 0, 7.7 and 15.1 kJ of UV-B, the photosynthetic rates of 30-day-old leaves compared with 12-day-old leaves were reduced by 52, 76 and 86%, respectively. Chlorophyll pigments were not affected by leaf age at UV-B radiation of 0 and 7.7 kJ, but UV-B of 15.1 kJ reduced the chlorophylls by 20, 60 and 80% in 12, 21 and 30-day-old leaves, respectively. The hyperspectral reflectance between 726 and 1142 nm showed interaction for UV-B radiation and leaf age. In cotton, leaf photosynthesis can be used as an indicator of leaf senescence, as it is more sensitive than photosynthetic pigments on exposure to UV-B radiation. This study revealed that, cotton leaves senesced early on exposure to UV-B radiation as indicated by leaf photosynthesis, and leaf hyperspectral reflectance can be used to detect changes caused by UV-B and leaf ageing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0031-9317.2004.00314.x
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  • 19
    Electronic Resource
    Electronic Resource
    Photometric studies of three Be stars
    Amsterdam : Elsevier
    Chinese Astronomy and Astrophysics 5 (1981), S. 349-356 
    Details
    ISSN: 0275-1062
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0275-1062(81)90058-8
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  • 20
    Electronic Resource
    Electronic Resource
    Aided Sintering Behaviour of Nano Hydroxyapatite Particles (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 89-92 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: To avoid microcrack formation caused by the addition of heterogeneous sintering aids, nanohydroxyapatite powder was prepared by precipitation method and doped into commercialhydroxyapatite powders as homogeneous sintering aid. Gelcasting method was used to prepare thesehydroxyapatite green bodies. Densification of the blended powder was performed by pressurelesssintering in air atmosphere at the range 1100℃ to 1400℃ for 2h, with a step size of 50℃. Theresults showed that the nano particle can greatly improve the densification process of the greenbodies, and at 1300℃, which is the highest sintering temperature for hydroxyapatite withoutdecomposition in the air atmosphere, the relative sintering densities of the doped green bodies and theones without doping were 93.99% and 83.13% respectively
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.89.pdf
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