In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 9S ( 1993-09-01), p. 4179-
Abstract:
The physical properties of BaTiO 3 films deposited onto (100)-oriented silicon wafers at a low substrate temperature of 350°C for fabricating silicon-on-insulator (SOI) structures are described. These films were prepared by rf planar magnetron sputtering using a target of BaTiO 3 ceramic. These films did not exhibit ferroelectricity, and the dielectric constant ε s and the dissipation factor tan δ were about 100 and 0.013, respectively. These films showed a breakdown field larger than 1×10 6 V/cm and were excellent insulators. Thin-film transistors were fabricated using a silicon film deposited onto the BaTiO 3 film. The field effect mobility of 34 cm 2 /Vs was obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4179
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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