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  • 1
    Electronic Resource
    Electronic Resource
    Effects of X-rays on cell membranes (1978)
    Springer
    Radiation and environmental biophysics 15 (1978), S. 213-219 
    Details
    ISSN: 1432-2099
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Physics
    Notes: Summary Changes in the membrane potential of cultured L-929 cells were investigated after irradiation with doses ranging from 5–200 Gy. Immediately after irradiation a depolarisation is observed that is followed by a damped oscillation of the membrane potential and finally by a rapprochement to the control value. Whereas the magnitude of depolarisation does not show any dependence on irradiation dose, the time required to reach the control value again increases with increasing dose. Up to 10 Gy, the period of the first half-oscillation rises rapidly to about 12 min, at higher doses a slow linear increase follows reaching a value of 23 min after 200 Gy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02176790
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Anisotropy of sliding friction on the triglycine sulfate (010) surface (1995)
    Springer
    Applied physics 61 (1995), S. 525-533 
    Details
    ISSN: 1432-0630
    Keywords: 61.16.Ch ; 62.20.-x ; 68.35.Bs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The frictional properties of freshly cleaved (010) surfaces of the ferroelectric TriGlycine Sulfate (TGS) were investigated by combined scanning and friction force microscopy under ambient conditions. A frictional contrast could be observed between domains with different electrical polarity, as well as between terraces inside individual domains which are separated by steps of half of the unit-cell height or an odd multiple of this value. The latter contrast mechanism originates from the arrangement of the molecules at the surface which is chemically homogeneous, but structurally rotated by 180° between different terraces. The resulting asymmetric surface potential gives rise to a frictional anisotropy in different directions that can be detected by the force microscope, as well as to a change of the frictional force between forward and backward scan direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540254
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Anisotropy of sliding friction on the triglycine sulfate (010) surface (1995)
    Springer
    Applied physics 61 (1995), S. 525-533 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.16.Ch; 62.20.-x; 68.35.Bs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The frictional properties of freshly cleaved (010) surfaces of the ferroelectric TriGlycine Sulfate (TGS) were investigated by combined scanning and friction force microscopy under ambient conditions. A frictional contrast could be observed between domains with different electrical polarity, as well as between terraces inside individual domains which are separated by steps of half of the unit-cell height or an odd multiple of this value. The latter contrast mechanism originates from the arrangement of the molecules at the surface which is chemically homogeneous, but structurally rotated by 180° between different terraces. The resulting asymmetric surface potential gives rise to a frictional anisotropy in different directions that can be detected by the force microscope, as well as to a change of the frictional force between forward and backward scan direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540254
    Location Call Number Limitation Availability
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    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Study of the influence of native oxide layers on atomic force microscopy imaging of semiconductor surfaces (1994)
    Springer
    Applied physics 59 (1994), S. 23-27 
    Details
    ISSN: 1432-0630
    Keywords: 61.16 ; 68.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have investigated the influence of the native oxide layer on semiconductor surfaces on the imaging properties of the atomic force microscope operated under ambient conditions by using epitaxial In1−x Ga x As layers grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on (001) oriented InP substrates which have been kept under ambient conditions for two years. The thickness and composition of the native oxide layers were studied with ellipsometry and X-ray photoelectron spectroscopy, respectively. Subsequently, the sample surfaces were imaged by means of atomic force microscopy operated in air which revealed terrace structures separated by monoatomic steps. The obtained data were compared with the surface morphology which can be expected from the MOCVD growth process. The results suggest that an accurate study of semiconductor layer growth by atomic force microscopy in air is possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348415
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    Paper (German National Licenses)
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