In:
Journal of Materials Chemistry A, Royal Society of Chemistry (RSC), Vol. 11, No. 32 ( 2023), p. 16963-16972
Abstract:
Solar cells based on Sb 2 Se 3 have attracted increasing attention due to its excellent optoelectronic properties and low-cost fabrication. Up to now, high-efficiency Sb 2 Se 3 solar cells with a superstrate structure have always used CdS as an electron transport layer (ETL). However, the parasitic absorption caused by CdS reduces the light absorption of the Sb 2 Se 3 absorber layer, and combined with the toxicity of the Cd element, jointly causes its limitation in practical application. Tin oxide (SnO 2 ) is a wide-bandgap ETL and has been widely used in solar cells due to its suitable energy level, high electron mobility, and good stability. However, Sb 2 Se 3 films deposited on metal oxides always exhibit poor quality. In this study, we demonstrate a facile strategy to improve the quality of an Sb 2 Se 3 film by modifying a SnO 2 layer with InCl 3 . We find that InCl 3 post-treatment can optimize the band alignment between SnO 2 and Sb 2 Se 3 , improve the quality of the SnO 2 /Sb 2 Se 3 heterojunction, and reduce deep-level defects. As a result, the PCE improves from 1.51% to 5.52%. Thus, this work offers a simple and effective way to improve the quality of Sb 2 Se 3 films deposited on SnO 2 ETLs and provides a new path towards fabricating Cd-free Sb 2 Se 3 solar cells.
Type of Medium:
Online Resource
ISSN:
2050-7488
,
2050-7496
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
2702232-8
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